Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device includes a semiconductor substrate SB and a wiring structure formed on a main surface of the semiconductor substrate SB. The uppermost first wiring layer among a plurality of wiring layers included in the wiring structure includes a pad PD, and the pad PD has a first region for bonding a copper wire and a second region for bringing a probe into contact with the pad. A second wiring layer that is lower by one layer than the first wiring layer among the plurality of wiring layers included in the wiring structure includes a wiring line M6 arranged immediately below the pad PD, the wiring line M6 is arranged immediately below a region other than the first region of the pad PD, and no conductor pattern in the same layer as a layer of the wiring line M6 belong is formed immediately below the first region of the pad PD.

TECHNICAL FIELD

The present invention relates to a semiconductor device and a method ofmanufacturing the same, and is preferably used for, for example, asemiconductor device to which a copper wire is connected and a method ofmanufacturing the semiconductor device.

BACKGROUND ART

A wire is connected to a pad of a semiconductor chip. While a gold wireis cited as the wire connected to the pad, usage of a copper wire hasbeen recently studied.

Japanese Patent Application Laid-open Publication No. 2014-143236(Patent Document 1) describes a technique related to a semiconductordevice applicable to copper wire bonding.

RELATED ART DOCUMENT Patent Document

Patent Document 1: Japanese Patent Application Laid-open Publication No.2014-143236

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

In the semiconductor device to which the copper wire is connected,improvement in the reliability has been desired.

Other objects and novel characteristics will be apparent from thedescription of the present specification and the accompanying drawings.

Means for Solving the Problems

According to one embodiment, a semiconductor device includes: asemiconductor chip having a pad; a copper wire electrically connected tothe pad of the semiconductor chip; and a resin sealing portion sealingthe semiconductor chip and the copper wire. In the semiconductor chip,the pad has a first region for bonding of the copper wire and a secondregion for bringing a probe into contact with the pad. In thesemiconductor chip, a wiring layer that is lower by one layer than thepad includes a first wiring line arranged immediately below the pad. Thefirst wiring line is arranged immediately below a region other than thefirst region of the pad, and no conductor pattern in the same layer asthe layer of a first wiring line is formed immediately below the firstregion of the pad.

According to one embodiment, a semiconductor device includes: asemiconductor substrate; and a wiring structure formed on a main surfaceof the semiconductor substrate. The uppermost first wiring layer among aplurality of wiring layers included in the wiring structure includes apad, and the pad has a first region for bonding a copper wire and asecond region for bringing a probe into contact with the pad. A secondwiring layer that is lower by one layer than the first wiring layeramong the plurality of wiring layers included in the wiring structureincludes a first wiring line arranged immediately below the pad, thefirst wiring line is arranged immediately below a region other than thefirst region of the pad, and no conductor pattern in the same layer as alayer of the first wiring line is formed immediately below the firstregion of the pad.

According to one embodiment, a process of manufacturing a semiconductordevice includes: (a) a step of preparing a semiconductor substrate; (b)a step of forming a wiring structure on a main surface of thesemiconductor substrate; (c) a step of performing a probing check tothat a probe is brought into contact with a pad included in theuppermost first wiring layer among a plurality of wiring layers includedin the wiring structure; and (d) a step of electrically connecting acopper wire to the pad. The pad has a first region for bonding thecopper wire and a second region for bringing the probe into contact withthe pad. A second wiring layer that is lower by one layer than the firstwiring layer among the plurality of wiring layers includes a firstwiring line arranged immediately below the pad, the first wiring line isarranged immediately below a region other than the first region of thepad, and no conductor pattern in the same layer as a layer of the firstwiring line is formed immediately below the first region of the pad.

Effects of the Invention

According to one embodiment, the reliability of the semiconductor devicecan be improved.

BRIEF DESCRIPTIONS OF THE DRAWINGS

FIG. 1 is an overall plan view of a semiconductor device according toone embodiment;

FIG. 2 is a cross-sectional view showing an example of a semiconductordevice (semiconductor package) obtained by packaging the semiconductordevice (semiconductor chip) of FIG. 1;

FIG. 3 is a cross-sectional view showing another example of thesemiconductor device (semiconductor package) obtained by packaging thesemiconductor device (semiconductor chip) of FIG. 1;

FIG. 4 is a process flowchart showing a process of manufacturing thesemiconductor device shown in FIG. 2;

FIG. 5 is a process flowchart showing a process of manufacturing thesemiconductor device shown in FIG. 3;

FIG. 6 is a cross-sectional view of a principle part of thesemiconductor device according to one embodiment;

FIG. 7 is a cross-sectional view of the principle part of thesemiconductor device according to one embodiment;

FIG. 8 is a cross-sectional view showing a state in which a wire iselectrically connected to a pad shown in FIG. 7;

FIG. 9 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 10 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 11 is a cross-sectional view showing a situation in which a probeis brought into contact with the pad at a probing check;

FIG. 12 is a cross-sectional view of the principle part of thesemiconductor device of one embodiment during a manufacturing process;

FIG. 13 is a cross-sectional view of the principle part of thesemiconductor device during a manufacturing process continued from FIG.12;

FIG. 14 is a cross-sectional view of the principle part of thesemiconductor device during a manufacturing process continued from FIG.13;

FIG. 15 is a cross-sectional view of the principle part of thesemiconductor device during a manufacturing process continued from FIG.14;

FIG. 16 is a cross-sectional view of the principle part of thesemiconductor device during a manufacturing process continued from FIG.15;

FIG. 17 is a cross-sectional view of the principle part of thesemiconductor device during a manufacturing process continued from FIG.16;

FIG. 18 is a cross-sectional view of the principle part of thesemiconductor device during a manufacturing process continued from FIG.17;

FIG. 19 is a cross-sectional view of the principle part of thesemiconductor device during a manufacturing process continued from FIG.18;

FIG. 20 is a cross-sectional view of a principle part of a semiconductordevice of a first study example;

FIG. 21 is a cross-sectional view showing a state in which a copper wireis electrically connected to a pad shown in FIG. 20;

FIG. 22 is a cross-sectional view of a principle part of a semiconductordevice of a second study example;

FIG. 23 is a cross-sectional view showing a state in which a copper wireis electrically connected to a pad shown in FIG. 22;

FIG. 24 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 25 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 26 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 27 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 28 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 29 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 30 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 31 is a plan view of the principle part of the semiconductor deviceaccording to one embodiment;

FIG. 32 is a plan view showing an example of arrangement of pad regions;and

FIG. 33 is a plan view showing an example of arrangement of pad regions.

BEST MODE FOR CARRYING OUT THE INVENTION

In the embodiments described below, the invention will be described in aplurality of sections or embodiments when required as a matter ofconvenience. However, these sections or embodiments are not irrelevantto each other unless otherwise stated, and the one relates to the entireor a part of the other as a modification example, details, or asupplementary explanation thereof. Also, in the embodiments describedbelow, when referring to the number of elements (including number ofpieces, values, amount, range, and the like), the number of the elementsis not limited to a specific number unless otherwise stated or exceptthe case where the number is apparently limited to a specific number inprinciple. The number larger or smaller than the specified number isalso applicable. Further, in the embodiments described below, it goeswithout saying that the components (including element steps) are notalways indispensable unless otherwise stated or except the case wherethe components are apparently indispensable in principle. Similarly, inthe embodiments described below, when the shape of the components,positional relation thereof, and the like are mentioned, thesubstantially approximate and similar shapes and the like are includedtherein unless otherwise stated or except the case where it isconceivable that they are apparently excluded in principle. The samegoes for the numerical value and the range described above.

Hereinafter, embodiments will be described in detail based on theaccompanying drawings. Note that components having the same function aredenoted by the same reference symbols throughout all the drawings fordescribing the embodiments, and the repetitive description thereof willbe omitted. Also, in the embodiments described below, description of thesame or similar parts is not repeated in principle unless otherwiseparticularly required.

Also, in some drawings used in the embodiments, hatching is omitted evenin a cross-sectional view so as to make the drawings easy to see. And,hatching is used even in a plan view so as to make the drawings easy tosee.

Embodiment

<Overall Structure of Semiconductor Chip>

A semiconductor device according to the present embodiment will bedescribed with reference to drawings.

FIG. 1 is an overall plan view of a semiconductor device (semiconductorchip) CP according to the present embodiment, and FIG. 1 shows anoverall plan view of an upper surface side of the semiconductor deviceCP.

The semiconductor device (semiconductor chip) CP of the presentembodiment has an upper surface which is one main surface, and a backsurface (lower surface) which is the other main surface opposite to theupper surface, and FIG. 1 shows the upper surface of the semiconductordevice CP. In the semiconductor device CP, note that the main surface onwhich the pad PD is formed is referred to as upper surface of thesemiconductor device CP, and the main surface opposite to the mainsurface (that is, the upper surface) on which the pad PD is formed isreferred to as back surface of the semiconductor device CP.

As shown in FIG. 1, the semiconductor device CP includes a plurality ofpads (a pad electrode, an electrode pad, and a bonding pad) PD on itsupper surface. The pad PD functions as an external connection terminalof the semiconductor device CP. The pad PD is a pad for the wirebonding. When a semiconductor package or others is manufactured by usingthe semiconductor device CP, a wire (corresponding to a wire BWdescribed later) is electrically connected to the pad PD.

A plane shape of the semiconductor device CP is quadrangular, morespecifically rectangular. However, a corner of the rectangle may berounded. As shown in FIG. 1, the plurality of pads PD are arranged sideby side along the periphery of the upper surface of the semiconductordevice CP. In the case of FIG. 1, the plurality of pads PD are arranged(arrayed) along four sides of the upper surface of the semiconductordevice CP. However, the arrangement is not limited to this case, and theplurality of pads PD may be arranged (arrayed) along three sides, twosides, or one side in some cases. In the case of FIG. 1, the pads arearrayed in one row. However, the array is not limited to this case, andthe pads may be arrayed in, for example, two rows, or a so-calledstaggered arrangement. The number of the pads PD included in thesemiconductor device CP may be changed if needed.

<Semiconductor Package Structure>

FIG. 2 is a cross-sectional view schematically showing an example of asemiconductor device (semiconductor package) PKG obtained by packagingthe semiconductor device (semiconductor chip) CP of the presentembodiment, and FIG. 3 is a cross-sectional view showing anotherexample. Note that the semiconductor device PKG shown in FIG. 2 isreferred to as semiconductor device PKG1 by adding a reference symbolPKG1 while the semiconductor device PKG shown in FIG. 3 is referred toas semiconductor device PKG2 by adding a reference symbol PKG2.

The semiconductor device (semiconductor package) PKG1 shown in FIG. 2 isa semiconductor package having been manufactured by using a lead frame.The semiconductor device PKG1 includes the semiconductor device(semiconductor chip) CP, a die pad (chip mounting portion) DP on whichthe semiconductor device CP is supported or mounted, a plurality ofleads LD, a plurality of wires (bonding wires) BW electricallyconnecting the plurality of leads LD respectively to the plurality ofpads PD on the upper surface of the semiconductor device CP, and asealing portion MR1 sealing the semiconductor device CP, die pad DP,leads LD, and wires BW.

The sealing portion (sealing resin portion) MR1 is a sealing resinportion made of, for example, a resin material such as thermosettingresin, and may contain a filler or others. The semiconductor device CP,the plurality of leads LD, and the plurality of wires BW are sealed bythe sealing portion MR1, and are therefore electrically and mechanicallyprotected.

The semiconductor device CP is mounted (arranged) on the upper surfaceof the die pad DP so that the upper surface of the semiconductor deviceCP faces upward and so that the back surface of the semiconductor deviceCP is bonded and fixed to the upper surface of the die pad DP via abonding material (die bond, adhesive) BD1. The semiconductor device CPis sealed inside the sealing portion MR1, and is therefore not exposedfrom the sealing portion MR1.

Each lead (lead portion) LD is made of a conductor, preferably made of ametal material such as copper (Cu) or copper alloy. Each lead LD is madeup of an inner lead portion which is a part of lead LD arranged insidethe sealing portion MR1, and an outer lead portion which is a part ofthe lead LD arranged outside the sealing portion MR1. The outer leadportion protrudes from a side surface of the sealing portion MR1 tooutside of the sealing portion MR1.

The outer lead portion of each lead LD is bent so that a lower surfaceof vicinity of an end of the outer lead portion is slightly lower than alower surface of the sealing portion MR1. The outer lead portion of thelead LD functions as an external terminal of the semiconductor devicePKG1.

Each pad PD on the upper surface of the semiconductor device CP iselectrically connected to the inner lead portion of each lead LD via awire (bonding wire) BW which is a conductive connecting member. In otherwords, one end of both ends of each wire BW is connected to each pad PDof the semiconductor device CP while the other end thereof is connectedto the upper surface of the inner lead portion of each lead LD. The wireBW has conductivity, and is specifically a copper (Cu) wire containingcopper (Cu) as a main component. The wire BW is sealed inside thesealing portion MR1, and is not exposed from the sealing portion MR1.

Note that the description here is about a case of a QFP (Quad FlatPackage) type semiconductor package as the semiconductor device PKG1.However, the semiconductor device PKG1 is not limited to this type, andcan be variously changed in a type. For example, a different packagestructure such as a QFN (Quad Flat Non-leaded Package) structure and aSOP (Small Out-Line Package) structure may be applicable.

The semiconductor device (semiconductor package) PKG2 shown in FIG. 3 isa semiconductor package having been manufactured by using a wiringboard. The semiconductor device PKG2 includes: the semiconductor device(semiconductor chip) CP; a wiring board PC on which the semiconductordevice CP is mounted (supported); a plurality of wires BW electricallyconnecting the plurality of pads PD on the upper surface of thesemiconductor device CP to a plurality of connection terminals BLD ofthe wiring board PC in one-to-one correspondence; and a sealing portionMR2 covering the upper surface of the wiring board PC so as to cover thesemiconductor device CP and the wires BW. The semiconductor device PKG2further includes a plurality of solder balls BL as external terminalswhich are arranged in an area array on the lower surface of the wiringboard PC.

The wiring board PC has an upper surface and a lower surface which aremain surfaces opposite to each other. The semiconductor device CP ismounted (arranged) on the upper surface of the wiring board PC so thatthe upper surface of the semiconductor device CP faces upward and sothat the back surface of the semiconductor device CP is bonded and fixedto the upper surface of the wiring board PC via a bonding material (diebond, adhesive) BD2. The semiconductor device CP is sealed inside thesealing portion MR2, and is not exposed from the sealing portion MR2.

A plurality of connection terminals (bonding leads) BLD are formed onthe upper surface of the wiring board PC, and a plurality of conductivelands DL are formed on the lower surface of the wiring board PC. Theplurality of connection terminals BLD on the upper surface of the wiringboard PC are electrically connected to the plurality of conductive landsDL on the lower surface of the wiring board PC, respectively, via wiringlines of the wiring board PC. The wiring lines of the wiring board PCare wiring lines on the upper surface of the wiring board PC, via wiringlines of the wiring board PC, internal wiring lines of the wiring boardPC, wiring lines on the lower surface of the wiring board PC and others.Onto each conductive land DL, a solder ball BL is connected (formed) asa protruding electrode. Therefore, a plurality of solder balls BL arearranged in an array pattern on the lower surface of the wiring boardPC, and the plurality of solder balls BL can function as externalterminals of the semiconductor device PKG2.

Each pad PD on the upper surface of the semiconductor device CP iselectrically connected to each connection terminal BLD on the uppersurface of the wiring board PC via a wire (bonding wire) BW which is aconductive connecting member. In other words, one end of both ends ofeach wire BW is connected to each pad PD of the semiconductor device CPwhile the other end thereof is connected to each connection terminalBLD. As described above, the wire BW is a copper (Cu) wire containingcopper (Cu) as a main component. The wire BW is sealed inside thesealing portion MR2, and is not exposed from the sealing portion MR2.

As similar to the above-described sealing portion MR1, the sealingportion (sealing resin portion) MR2 is a sealing resin portion which ismade of, for example, a resin material such as thermosetting resin, andmay contain a filler. The semiconductor device CP and the plurality ofwires BW are sealed by the sealing portion MR2, and are thereforeelectrically and mechanically protected.

Note that the description here is about a case of a BGA (Ball GridArray) type semiconductor package as the semiconductor device PKG2.However, the semiconductor device PKG2 is not limited to this type, andcan be variously changed in a type. For example, a different packagestructure such as an LGA (Land Grid Array) structure may be applicable.

Next, a process of manufacturing the semiconductor device PKG1 shown inFIG. 2 and a process of manufacturing the semiconductor device PKG2shown in FIG. 3 will be described. FIG. 4 is a process flowchart showingthe process of manufacturing the semiconductor device PKG1 shown in FIG.2, and FIG. 5 is a process flowchart showing the process ofmanufacturing the semiconductor device PKG2 shown in FIG. 3.

First, the process of manufacturing the semiconductor device PKG1 shownin FIG. 2 will be described with reference to FIGS. 2 and 4.

In an attempt to manufacture the semiconductor device PKG1, a lead frameand the semiconductor device (semiconductor chip) CP are prepared first(step S1 in FIG. 4). The lead frame has a framework, a plurality ofleads LD connected to the framework, and the die pad DP connected to theframework via a plurality of suspension leads so that they areintegrally formed. At the step S1, the lead frame and then thesemiconductor device CP may be prepared in this order or thesemiconductor device CP and then the lead frame may be prepared in thisorder, or the lead frame and the semiconductor device CP may be preparedsimultaneously.

As shown in FIG. 4, note that the lead frame can be prepared byfabricating (manufacturing) the lead frame, and the semiconductor deviceCP can be prepared by fabricating (manufacturing) the semiconductordevice CP. As the process of manufacturing the semiconductor device PC,a wafer process, a probe check (wafer test) process continued from thewafer process, and back polishing (back grinding) and dicing processescontinued from the probe check process are performed. The details of theprocesses will be described later with reference to FIGS. 12 to 19. Notethat the dicing process is performed after the back polishing process.However, the dicing process may be performed without the back polishingprocess.

Subsequently, a die bonding process is executed to mount and bond thesemiconductor device CP onto the die pad DP of the lead frame via thebonding material BD1 (step S2 in FIG. 4).

Subsequently, a wire bonding process is executed to electrically connectthe plurality of pads PD of the semiconductor device CP to (inner leadportions of) the plurality of leads LD of the lead frame via theplurality of wires BW, respectively (step S3 in FIG. 4). One end of eachwire BW is connected to each pad PD of the semiconductor device CP, andthe other end thereof is connected to the upper surface of the innerlead portion of each lead LD. During the wire bonding process, thesemiconductor device CP is heated to a predetermined temperature.

Subsequently, resin sealing based on a molding process (resin moldingprocess) is executed to seal the semiconductor device CP and theplurality of wires BW connected thereto with the sealing portion(sealing resin portion) MR1 (step S4 in FIG. 4). By this molding processat the step S4, the sealing portion MR1 that seals the semiconductordevice CP, the die pad DP, the inner lead portions of the plurality ofleads LD, the plurality of wires BW, and the suspension leads is formed.

Subsequently, after outer lead portions of the leads LD, the outer leadportions being exposed from the sealing portion MR1, are subjected to aplating process if needed, the leads LD and the suspension leads are cutat predetermined positions outside the sealing portion MR1 to separatethem from the framework of the lead frame (step S5 in FIG. 4).

Subsequently, the outer lead portions of the leads LD, the outer leadportions protruding out of the sealing portion MR1, are subjected to abending process (lead process, lead forming) (step S6 in FIG. 4).

In this manner, the semiconductor device PKG1 shown in FIG. 2 ismanufactured.

Next, the process of manufacturing the semiconductor device PKG2 shownin FIG. 3 will be described with reference to FIGS. 3 and 5.

In an attempt to manufacture the semiconductor device PKG2, the wiringboard PC and the semiconductor device (semiconductor chip) CP areprepared first (step S11 in FIG. 5). At this stage, a plurality of thewiring boards PC may be integrally connected together in an array form.At step S11, the wiring board PC and then the semiconductor device CPmay be prepared in this order or the semiconductor device CP and thenthe wiring board PC may be prepared in this order, or the wiring boardPC and the semiconductor device CP may be simultaneously prepared.

Subsequently, the die bonding process is executed to mount and bond thesemiconductor device (semiconductor chip) CP onto the wiring board PCvia the bonding material BD2 (step S12 in FIG. 5).

Subsequently, the wire bonding process is executed to electricallyconnect the plurality of pads PD of the semiconductor device CP to theplurality of connection terminals BLD of the wiring board PC on whichthe semiconductor device CP is mounted via the plurality of wires BW,respectively (step S13 in FIG. 5). One end of each wire BW is connectedto each pad PD of the semiconductor device CP, and the other end thereofis connected to each connection terminal BLD. During the wire bondingprocess, the semiconductor device CP is heated to a predeterminedtemperature.

Subsequently, the resin sealing based on the molding process (resinmolding process) is executed to form the sealing portion (sealing resinportion) MR2 on the upper surface of the wiring board PC so as to coverthe semiconductor device CP and the wires BW, thus, the semiconductordevice CP and the wires BW are sealed with the sealing portion MR2 (stepS14 in FIG. 5).

Subsequently, a solder ball BL is connected to each conductive land DLon the lower surface of the wiring board PC (step S15 in FIG. 5).

Then, if the plurality of wiring boards PC are integrally connectedtogether in the array form, the wiring boards PC are divided intoindividual wiring boards PC by cutting (dicing) a wiring board base inwhich the plurality of wiring boards PC are integrally connectedtogether in the array form (step S16 in FIG. 5). At this step, thesealing portion MR2 may also be cut together with the wiring board base.

In this manner, the semiconductor device PKG2 shown in FIG. 3 ismanufactured.

<Internal Structure of Semiconductor Chip>

FIG. 6 is a cross-sectional view of a principle part of thesemiconductor device (semiconductor chip) CP according to the presentembodiment. FIG. 7 is a cross-sectional view of the principle part ofthe semiconductor device CP according to the present embodiment.Although FIG. 7 shows the same cross section as that of FIG. 6,illustration of a structure lower than an interlayer insulating film IL6is omitted in FIG. 7.

In the semiconductor device CP of the present embodiment, semiconductorelements such as MISFETs are formed on a main surface of a semiconductorsubstrate SB, and a multilayer wiring structure including a plurality ofwiring layers is formed on the semiconductor substrate SB. Aconfiguration example of the semiconductor device of the presentembodiment will specifically be described below.

As shown in FIG. 6, semiconductor elements such as MISFETs (MetalInsulator Semiconductor Field Effect Transistor) are formed on thesemiconductor substrate SB made of single-crystal silicon, etc., thesemiconductor substrate SB making up the semiconductor device of thepresent embodiment.

On the main surface of the semiconductor substrate SB, element isolationregions ST are formed by an STI (Shallow Trench Isolation) method, etc.An MISFET1 is formed in an active region of the semiconductor substrateSB, the active region being defined by these element isolation regionsST. The element isolation region ST is formed of an insulating filmembedded in a trench formed in the semiconductor substrate SB.

The MISFET1 has a gate electrode GE formed on the main surface of thesemiconductor substrate SB via a gate insulating film, and source/drainregions (semiconductor regions each for a source or a drain) SD formedinside the semiconductor substrate SB on both sides of the gateelectrode GE. The source/drain regions SD may take an LDD (Lightly DopedDrain) structure. In this case, a sidewall insulating film (notillustrated) which is referred to also as sidewall spacer is formed on aside wall of the gate electrode GE. As the MISFET1, either an n-channeltype MISFET or a p-channel type MISFET or both the n-channel type MISFETand the p-channel type MISFET can be formed. Note that the source/drainregions SD of the n-channel type MISFET are formed inside a p-type well(not illustrated) in the semiconductor substrate SB, and thesource/drain regions SD of the p-channel type MISFET are formed insidean n-type well (not illustrated) in the semiconductor substrate SB.

Note that the MISFET is described as an example of the semiconductorelement formed on the semiconductor substrate SB. Meanwhile, in additionto the MISFET, a capacitive element, a resistance element, a memoryelement, a transistor different in a structure or others may also beformed.

A single-crystal silicon substrate is described here as an example ofthe semiconductor substrate SB. Meanwhile, as another aspect, an SOI(Silicon on Insulator) substrate or others may be also used as thesemiconductor substrate SB.

On the semiconductor substrate SB, a wiring structure (multilayer wiringstructure) including a plurality of insulating films (interlayerinsulating films) and a plurality of wiring layers is formed.

That is, on the semiconductor substrate SB, a plurality of interlayerinsulating films (insulating films) IL1, IL2, IL3, IL4, IL5, IL6, andIL7 are formed, and a plug V1, vias V2, V3, V4, V5, and V6, and wiringlines M1, M2, M3, M4, M5, and M6 are formed in these interlayerinsulating films IL1, IL2, IL3, IL4, IL5, IL6, and IL7. An interlayerinsulating film IL8 is formed on the inter-layer insulating film IL7,and the pad PD is formed on this interlayer insulating film IL8. Notethat a wiring line (not illustrated) in the same layer as that of thepad PD can be formed on the interlayer insulating film IL8.

Specifically, the interlayer insulating film IL1 is formed on thesemiconductor substrate SB so as to cover the MISFET1, the conductiveplug V1 is buried in the interlayer insulating film IL1, the interlayerinsulating film IL2 is formed on the interlayer insulating film IL1 inwhich the plug V1 is buried, and the wiring line M1 is buried in thisinterlayer insulating film IL2. The interlayer insulating film IL3 isformed on the interlayer insulating film IL2 in which the wiring line M1is buried, the wiring line M2 is buried in this interlayer insulatingfilm IL3, the interlayer insulating film IL4 is formed on the interlayerinsulating film IL3 in which the wiring line M2 is buried, and thewiring line M3 is buried in this interlayer insulating film IL4. Theinterlayer insulating film IL5 is formed on the interlayer insulatingfilm IL4 in which the wiring line M3 is buried, the wiring line M4 isburied in this interlayer insulating film IL5, the interlayer insulatingfilm IL6 is formed on the interlayer insulating film IL5 in which thewiring line M4 is buried, and the wiring line M5 is buried in thisinterlayer insulating film IL6. The interlayer insulating film IL7 isformed on the interlayer insulating film IL6 in which the wiring line M5is buried, the wiring line M6 is buried in this interlayer insulatingfilm IL7, the interlayer insulating film IL8 is formed on the interlayerinsulating film IL7 in which the wiring line M6 is buried, and the padPD is formed on this interlayer insulating film IL8. Each of theinterlayer insulating films IL1 to IL8 is structured as a single-layerinsulating film (e.g., silicon oxide film) ora stacked film of aplurality of insulating films. An insulating film PV is formed on theinterlayer insulating film IL8 so as to cover the pad PD, and an openingOP at which a part of the pad PD is exposed in the insulating film PV.

Each plug V1 is made of a conductor and is arranged below the wiringline M1. The plug V1 electrically connects the wiring line M1 to varioussemiconductor regions (e.g., the source/drain regions SD) formed in thesemiconductor substrate SB, the gate electrodes GE, etc.

The via V2 is made of a conductor, is integrally formed with the wiringline M2, and is arranged between the wiring line M2 and the wiring lineM1 to electrically connect the wiring line M2 to the wiring line M1. Inother words, the wiring line M2 and the via V2 formed integrally withthe wiring line M2 are buried in the interlayer insulating film IL3 by adual damascene wiring method. As another aspect, the via V2 and thewiring line M2 can be separately formed by a single damascene wiringmethod. This can be also said for the vias V3, V4, V5, V6, and V7.

The via V3 is made of a conductor, is integrally formed with the wiringline M3, and is arranged between the wiring line M3 and the wiring lineM2 to electrically connect the wiring line M3 to the wiring line M2. Inother words, the wiring line M3 and the via V3 formed integrally withthe wiring line M3 are buried in the interlayer insulating film IL4 by adual damascene wiring method.

The via V4 is made of a conductor, is integrally formed with the wiringline M4, and is arranged between the wiring line M4 and the wiring lineM3 to electrically connect the wiring line M4 to the wiring line M3. Inother words, the wiring line M4 and the via V4 formed integrally withthe wiring line M4 are buried in the interlayer insulating film IL5 by adual damascene wiring method.

The via V5 is made of a conductor, is integrally formed with the wiringline M5, and is arranged between the wiring line M5 and the wiring lineM4 to electrically connect the wiring line M5 to the wiring line M4. Inother words, the wiring line M5 and the via V5 formed integrally withthe wiring line M5 are buried in the interlayer insulating film IL6 by adual damascene wiring method.

The via V6 is made of a conductor, is integrally formed with the wiringline M6, and is arranged between the wiring line M6 and the wiring lineM5 to electrically connect the wiring line M6 to the wiring line M5. Inother words, the wiring line M6 and the via V6 formed integrally withthe wiring line M6 are buried in the interlayer insulating film IL7 by adual damascene wiring method.

The wiring lines M1, M2, M3, M4, M5, and M6 are illustrated and descriedas damascene wiring lines (buried wiring lines) formed by the damascenewiring method. However, these wiring lines are not limited to thedamascene wirings, can be also formed by patterning a conductive filmfor wiring, and can be, for example, aluminum wiring liens.

As shown in FIGS. 6 and 7, in the interlayer insulating film IL8, anopening (through-hole) SH is formed ata position overlapping the pad PDin a plan view. In the opening SH, the via V7 is formed (buried). Thevia V7 is made of a conductor, and is arranged between the pad PD andthe wiring line 6 to electrically connect the pad PD to the wiring lineM6. In other words, the via V7 is buried in the interlayer insulatingfilm IL6 by the single damascene wiring method.

According to the present embodiment, note that the via V7 and the pad PDare separately formed. Meanwhile, as another aspect, the via V7 and thepad PD can be also integrally formed together. When the via V7 and thepad PD are integrally formed together, the via V7 is formed by burying apart of the pad PD into the opening SH of the interlayer insulating filmIL8.

The wiring structure (multilayer wiring structure) including theplurality of insulating films (interlayer insulating films) and theplurality of wiring layers is formed on the semiconductor substrate SB,and the wiring line M1 is a wiring lines in the lowermost wiring layeramong the plurality of wiring layers included in the wiring structureformed on the semiconductor substrate SB. The wiring line M2 is a wiringline in a wiring layer that is upper by one layer than the lowermostwiring layer among the plurality of wiring layers included in the wiringstructure. The wiring line M3 is a wiring line in a wiring layer that isupper by two layers than the lowermost wiring layer among the pluralityof wiring layers included in the wiring structure. The wiring line M4 isa wiring line in a wiring layer that is upper by three layers than thelowermost wiring layer among the plurality of wiring layers included inthe wiring structure. The wiring line M5 is a wiring line in a wiringlayer that is upper by four layers than the lowermost wiring layer amongthe plurality of wiring layers included in the wiring structure. Thewiring line M6 is a wiring line in the wiring layer that is upper byfive layers than the lowermost wiring layer among the plurality ofwiring layers included in the wiring structure. The pad PD is formed ina wiring layer that is upper by six layers than the lowermost wiringlayer (that is, in the uppermost wiring layer) among the plurality ofwiring layers included in the wiring structure.

To put it in another way, the pad PD is included in the uppermost wiringlayer among the plurality of wiring layers included in the wiringstructure formed on the semiconductor substrate SB. The wiring line M6is a wiring line in a wiring layer that is lower by one layer than theuppermost wiring layer among the plurality of wiring layers included inthe wiring structure. The wiring line M5 is a wiring line in a wiringlayer that is lower by two layers than the uppermost wiring layer amongthe plurality of wiring layers included in the wiring structure. Thewiring line M4 is a wiring line in a wiring layer that is lower by threelayers than the uppermost wiring layer among the plurality of wiringlayers included in the wiring structure. The wiring line M3 is a wiringline in a wiring layer that is lower by four layers than the uppermostwiring layer among the plurality of wiring layers included in the wiringstructure. The wiring line M2 is a wiring line in a wiring layer that islower by five layers than the uppermost wiring layer among the pluralityof wiring layers included in the wiring structure. The wiring line M1 isa wiring line in a wiring layer that is lower by six layers than theuppermost wiring layer (that is, in the lowermost layer) among theplurality of wiring layers included in the wiring structure.

A thickness of the wiring line M6 is larger than respective thicknessesof the wiring lines M1, M2, M3, M4, and M5. A thickness of the pad PD islarger than the thickness of the wiring line M6. A width of the wiringline M6 is larger than respective widths of the wiring lines M1, M2, M3,M4, and M5. A width of the pad PD is larger than the width of the wiringline M6. Note that a width of a wiring line corresponds to a width(dimension) in a direction substantially parallel with the main surfaceof the semiconductor substrate SB and substantially perpendicular to thedirection of extension of the wiring line. The width of the pad PDcorresponds to a dimension of the pad PD in a short-side direction (avertical dimension in FIG. 9). Each thickness of the interlayerinsulating films IL7 and IL8 is larger than each thickness of theinterlayer insulating films IL2, IL3, IL4, IL5, and IL6.

Although an example of thickness is described as follows, the thicknessis not limited to this. The thickness of the pad PD (mainly a thicknessof an Al-content conductive film AM1) is, for example, about 1000 nm to2000 nm, the thickness of the wiring line M6 is, for example, about 500nm to 1000 nm, and each thickness of the wiring lines M1, M2, M3, M4,and M5 is, for example, about 50 nm to 200 nm. The thickness of theinterlayer insulating film IL8 is, for example, about 500 nm to 1000 nm,the thickness of the interlayer insulating film IL7 is, for example,about 1000 nm to 2000 nm, each thickness of the interlayer insulatingfilms IL3, IL4, IL5 and IL6 is, for example, about 100 nm to 400 nm, andthe thickness of the interlayer insulating film IL2 is, for example,about 50 nm to 200 nm. The thickness of the interlayer insulating filmIL1 is, for example, about 100 nm to 500 nm.

Note that the explanation here has been made about a case of total sevenlayers including the wiring layer in which the pad PD is formed, as thenumber of the wiring layers included in the wiring structure formed onthe semiconductor substrate SB. However, the number is not limited tothis. The number of the wiring layers included in the wiring structureformed on the semiconductor substrate SB may be variously changed.However, a plurality of wiring layers are included in the wiringstructure formed on the semiconductor substrate SB, and the pad PD isincluded in the uppermost wiring layer of the plurality of wiringlayers.

FIG. 8 is a cross-sectional view showing a state in which a wire(bonding wire) BW is electrically connected to the pad PD so as to showthe cross section corresponding to FIG. 7. As similarly seen in FIG. 7,illustration of a structure lower than the interlayer insulating filmIL6 is omitted also in FIG. 8. In the semiconductor devices PKG1 andPKG2 of FIGS. 2 and 3, the wire BW is electrically connected to the padPD as shown in FIG. 8. However, in FIG. 8, illustration of the sealingresin (corresponding to the sealing portions MR1 and MR2) is omitted.

As shown in FIG. 8, the wire BW serving as a connection member iselectrically connected to the pad PD. The wire BW is a copper (Cu) wirecontaining copper (Cu) as a main component. Not only the copper (Cu)wire entirely made of copper (Cu) but also a copper (Cu) wire whosesurface is coated with a palladium (Pd) film or others can be used asthe wire BW. The wire BW is bonded and electrically connected to the padPD exposed at the opening OP of the insulating film PV. Note that thewire BW is bonded to a wire bonding region WA of the pad PD (see FIGS. 6and 7).

The wire BW is the copper (Cu) wire which is a hard material. Therefore,by applying a mechanical pressure so that the wire BW is pressure bondedto the pad PD, high bonding strength can be obtained. In addition, thecopper (Cu) wire is cheaper than a gold (Au) wire, and therefore, has anadvantage of cost reduction.

<Configuration of Pad>

A configuration of the pad PD will further be described with referenceto FIGS. 7, 8, and 9 to 11.

Each of FIGS. 9 and 10 is a plan view of a principle part of thesemiconductor device (semiconductor chip) CP according to the presentembodiment so as to show a plan view of a pad PD formation region. Thecross-sectional view of FIG. 7 substantially corresponds to across-sectional view taken along a line A1-A1 of FIG. 9.

Note that FIG. 9 shows the pad PD by a solid line, shows the opening OPof the insulating film PV by a two-dot chain line, and shows the wirebonding region WA and a probe contact region PA by dotted lines (brokenlines). FIG. 9 does not show the wiring line M6. Meanwhile, while FIG.10 shows the same plane region as shown in FIG. 9, FIG. 10 further showsthe wiring lines M6 and the via V7 in addition to the configuration ofFIG. 9. Specifically, FIG. 10 shows the wiring line M6 by a solid lines,shows the pad PD by a single-dot chain line, shows the opening OP of theinsulating film PV by a two-dot chain line, shows the wire bondingregion WA and the probe contact region PA by dotted lines (brokenlines), and also illustrates a position at which the via V7 (opening SH)is formed.

FIG. 11 is a cross-sectional view showing a state in which a probe(probe needle) PRB is brought into contact with the pad PD at a probingcheck, and shows the cross section corresponding to FIG. 7. As similarlyseen in FIG. 7, illustration of the structure lower than the interlayerinsulating film IL6 is also omitted in FIG. 11.

As shown in FIG. 7, the pad PD is formed above the interlayer insulatingfilm IL8, the insulating film PV is formed on the interlayer insulatingfilm IL8 so as to cover a part of the pad PD, and another part of thepad PD is exposed at the opening OP formed on the insulating film PV.That is, as shown in FIGS. 7 and 9, the opening OP is formed as theopening for the pad PD so that the opening OP is inside the pad PD in aplan view. As a result, a plane direction (plane area) of the opening OPis smaller than a plane direction (plane area) of the pad PD, and thepad PD has the part exposed at the opening OP (i.e., part overlappingthe opening OP in a plan view) and the part covered with the insulatingfilm PV (i.e., part not overlapping the opening OP in a plan view). Anouter periphery (that is a part not overlapping the opening OP in a planview) of the upper surface of the pad PD is covered with the insulatingfilm PV, while a central part (that is a part overlapping the opening OPin a plan view) of the same is not covered with the insulating film PVbut is exposed.

The insulating film PV is a film that is the top layer of thesemiconductor device (semiconductor chip) CP, and can function as asurface protective film. In other words, the insulating film PV is apassivation film. Each plane shape of the pad PD and the opening OP is,for example, quadrangular (more specifically rectangular). As theinsulating film PV, a single-layer insulating film or a stackedinsulating film formed by stacking a plurality of insulating films canbe used. As another aspect, another insulating film can be furtherformed on the insulating film PV. Even in this case, a part of the padPD is still exposed at the opening OP.

A region of the upper surface of the pad PD, the region being exposed atthe opening OP, is a region where, for example, an external member suchas a bonding wire (corresponding to the wire BW) and a probe can bebrought into contact with the pad PD.

According to the present embodiment, a region of the upper surface ofthe pad PD is referred to as probe contact region PA, the region beingexposed at the opening OP and being in contact with a probe (probeneedle) at an electrical characteristics test (probing check) of thesemiconductor chip (or chip region before the dicing process). At theprobing check, the probe is brought into contact with the probe contactregion PA of the pad PD, and thus, a probe mark is formed. For thisreason, before the probing check, the probe contact region PA can beregarded as a region with which the probe is intended to be brought intocontact at the probing check. During the probing check, the probecontact region PA can be also regarded as a region with which the probeis being brought into contact. After the probing check, the probecontact region PA can be also regarded as a region where the probe markhas been formed.

FIG. 11 shows a state in which the probe PRB is brought into contactwith the pad PD at the probing check, and in which the probe PRB isbrought into contact with the probe contact region PA (see FIGS. 6, 7,9, and 10) of the upper surface of the pad PD to carry out theelectrical characteristics test (probing check).

According to the present embodiment, a region of the upper surface ofthe pad PD, the region being exposed at the opening OP and being bonded(connected) to a wire (corresponding to the wire BW), is referred to aswire bonding region (wire connection region) WA. In the wire bondingprocess (corresponding to the steps S3 and S13) in manufacturing thesemiconductor package, the wire (BW) is bonded (connected) to the wirebonding region WA of the pad PD so that the wire (BW) is bonded(connected) to the wire bonding region WA of the pad PD in themanufactured semiconductor package (corresponding to the semiconductordevice PKG). For this reason, before the bonding of the wire to the padPD, the wire bonding region WA can be regarded as a region to which thewire is intended to be bonded. After the bonding of the wire to the padPD, the wire bonding region WA can be regarded as a region to which thewire has been bonded.

FIG. 8 shows a state in which the wire BW is electrically connected tothe pad PD, and in which the wire BW is bonded and electricallyconnected to the wire bonding region WA (see FIGS. 6, 7, 9, and 10) ofthe upper surface of the pad PD.

The probe contact region PA and the wire bonding region WA are shown inFIGS. 6, 7, 9, and 10. The probe contact region PA and the wire bondingregion WA are plane regions which are different from each other and donot overlap in a plan view. Because of this configuration, at theprobing check, while the probe is brought into contact with the probecontact region PA of pad PD which results in the probe mark, the probeis not brought into contact with the wire bonding region WA of the padPD which does not result in the probe mark. In the wire bonding process(corresponding to the steps S3 and S13), while the wire (correspondingto the wire BW) is bonded to the wire bonding region WA of the pad PD,the wire (corresponding to the wire BW) is not bonded to the probecontact region PA of the pad PD. A plane dimension (plane area) of theprobe contact region PA is smaller than a plane dimension (plane area)of the opening OP, a plane dimension (plane area) of the wire bondingregion WA is smaller than the plane dimension (plane area) of theopening OP, and the probe contact region PA and wire bonding region WAare inside the opening OP in a plan view.

Note that a reason why the probe contact region PA and the wire bondingregion WA are formed as plane regions different from each other is asfollows. That is, at the probing check, the probe (probe needle) ispressed against the probe contact region PA of the upper surface of thepad PD to perform an electrical test. Therefore, in this probing check,the probe mark is formed in the probe contact region PA of the pad PD. Aregion having the formed probe mark in the upper surface of the pad PDhas low flatness. For this reason, when the wire (BW) is bonded to theregion having the formed probe mark in the upper surface of the pad PDby the wire bonding process, there is a risk of reduction in the bondingstrength of the wire (BW). Therefore, it is desirable to bond the wire(BW) to a region having no probe mark formed in the upper surface of thepad PD. In order to achieve this, according to the present embodiment,the probe contact region PA and the wire bonding region WA are providedas the plane regions different from each other. As a result, while theprobe is brought into contact with the probe contact region PA of thepad PD so that the probe mark is formed at the probing check, the wire(BW) can be bonded to the wire contact region WA having no probe mark atthe wire bonding process. Therefore, the bonding strength of the wire(BW) can be improved, and thus, the reliability of the connection of thewire (BW) can be improved, which results in improvement of thereliability of the semiconductor package.

The pad PD is an aluminum pad mainly made of aluminum (Al).Specifically, the pad PD is formed of a stacked film having a barrierconductor film (barrier conductive film) BR1, an Al (aluminum)-contentconductive film AM1 formed on the barrier conductor film BR1, and abarrier conductor film (barrier conductive film) BR2 formed on theAl-content conductive film AM1. While the barrier conductor film BR2 isformed on the Al-content conductive film AM1 in a part of the pad PD,the part being covered with the insulating film PV (i.e., a part belowthe insulating film PV), no barrier conductor film BR2 is formed on theAl-content conductive film AM1 in a part of the pad PD, the part beingnot covered with the insulating film PV but exposed at the opening OP ofthe insulating film PV. This is because the barrier conductor film BR2in the part exposed at the opening OP of the insulating film PV isremoved.

The Al-content conductive film AM1 is a conductive film containing Al(aluminum), and more preferably a conductive material film (conductivematerial film exhibiting metallic conduction) containing aluminum (Al)as a main component (primary component). As the Al-content conductivefilm AM1, an aluminum film (pure aluminum film) can be used. However,this film is not limited to only the aluminum film, and a compound filmor alloy film containing aluminum (Al) as a main component (primarycomponent) can be also used. For example, a compound film or alloy filmcomposed of Al (aluminum) and Si (silicon) or a compound film or alloyfilm composed of Al (aluminum) and Cu (copper) or a compound film oralloy film composed of Al (aluminum), Si (silicon), and Cu (copper) canbe also preferably used as the Al-content conductive film AM1. Thecomposition ratio (content) of the Al (aluminum) in the Al-contentconductive film AM1 is larger than 50 atomic percent (that is, the filmis an aluminum-rich film), more preferably equal to or larger than 98atomic percent.

Both of the barrier conductor film BR1 and the barrier conductor filmBR2 are conductive films (each of which is more preferably a conductivefilm exhibiting metallic conduction). The barrier conductor film BR1 ofthese films has a function that improves its adherence to a base (suchas the interlayer insulating film IL8) to prevent its peeling off.Therefore, the barrier conductor film BR1 is desirably excellent in theadherence to the base (such as the interlayer insulating film IL8) andthe adherence to the Al-content conductive filmAM1 formed on the barrierconductor film BR1. As the barrier conductor film BR1, for example, astacked film composed of a titanium (Ti) film, a titanium nitride (TiN)film, and a titanium (Ti) film stacked from bottom in this order can bepreferably used. However, in addition to such a stacked film, forexample, a single-layer titanium (Ti) film, a single-layer titaniumnitride (TiN) film, a stacked-layer film composed of a titanium (Ti)film and a titanium nitride (TiN) film or others can be also used as thebarrier conductor film BR1.

The barrier conductor film BR2 has a function that improves itsadherence to the insulating film PV to prevent its peeling off.Therefore, the barrier conductor film BR2 is desirably excellent in theadherence to the Al-content conductive film AM1 that is the base and theadherence to the insulating film PV formed on the barrier conductor filmBR2. The barrier conductor film BR2 can also function as a reflectionpreventive film in a photolithographic process. As the barrier conductorfilm BR2, a titanium nitride (TiN) film can be preferably used. However,in addition to such a film, for example, a titanium (Ti) film, atantalum (Ta) film, a tantalum nitride (TaN) film, a tungsten (W) film,a tungsten nitride (WN) film, a titanium tungsten (TiW) film, or atantalum tungsten (TaW) film can be also used as the barrier conductorfilm BR2.

The Al-content conductive film AM1 can function as a main conductor filmof the pad PD. The thickness of the Al-content conductive film AM1 islarger (thicker) than respective thicknesses of the barrier conductorfilms BR1 and BR2. The pad PD is mainly composed of the Al-contentconductive film AM1, and therefore, can be regarded as an aluminum pad.

In the case of FIG. 7, note that the Al-content conductive film AM1 ofthe pad PD is exposed at the opening OP of the insulating film PV.Therefore, when the wire BW is bonded to the pad PD, the wire BW isdirectly bonded to the Al-content conductive film AM1 of the pad PD asshown in FIG. 8.

As another aspect, a metal film (such as a palladium film) can be formedon the Al-content conductive film AM1 of the pad PD exposed at theopening OP of the insulating film PV. In this case, when the wire BW isbonded to the pad PD, the wire BW is bonded to the metal film (such asthe palladium film) formed on the Al-content conductive film AM1 of thepad PD. In this case, the metal film is interposed between the wire BWand the Al-content conductive film AM1 of the pad PD, and therefore, thewire BW is connected electrically to the Al-content conductive film AM1of the pad PD via this metal film. In this case, the metal film formedon the Al-content conductive film AM1 of the pad PD can be regarded as apart of the pad PD.

In either case, by the wire bonding process to the pad PD, the wire BWis electrically connected to the pad PD.

The pad PD is electrically connected through the via V7 to the wiringline M6 in the layer lower than the pad PD. While the via V7 overlapsthe pad PD in a plan view, the via V7 is preferably formed in a locationwhere the via V7 does not overlap the opening OP. That is, the via V7 ispreferably arranged below a part of the pad PD, the part being coveredwith the insulating film PV.

As another aspect, a wiring line in the same layer as that of the pad PDcan be integrally connected to the pad PD so that the wiring line iselectrically connected to the wiring line M6 in the lower layer througha via (a conductive via buried in the interlayer insulating film IL8) inthe same layer as that of the via V7. In this case, it is not requiredto form the via V7 below the pad PD, and the wiring line in the samelayer as that of the pad PD, the wiring line being connected to the padPD, may be integrally formed with the pad PD, and the via in the samelayer as that of the via V7 may be arranged below the wiring line.

In the cases of FIGS. 9 and 10, each plane shape of the pad PD and ofthe opening OP is substantially rectangular. A plane dimension (planearea) of the opening OP is slightly smaller than a plane dimension(plane area) of the pad PD, the opening OP is inside the pad PD in aplan view, and the probe contact region PA and the wire bonding regionWA are inside the opening OP in a plan view. The probe contact region PAand the wire bonding region WA are arranged side by side in a long-sidedirection of the pad PD (lateral direction in FIGS. 9 and 10). Thelong-side direction of the pad PD is a direction that is, for example,substantially parallel to the upper surface of the semiconductor deviceCP and substantially perpendicular to a chip side CH described later.Apart of pad PD, the part overlapping the opening OP in a plan view, inother words, the part being exposed at the opening OP, actuallyfunctions as the pad (pad electrode, bonding pad).

Although one example of the dimensions is described below, thedimensions are not limited to this example. The long side of the openingOP is, for example, 80 μm to 160 μm, and the short side of the openingOP is, for example, about 40 μm to 80 μm. In the pad PD in the cases ofFIGS. 9 and 10, a width (a dimension in a longitudinal direction in FIG.9) of a part having the wire bonding region WA arranged in the pad PD isslightly (for example, about 2 μm to 10 μm) larger than a width (adimension in the longitudinal direction in FIG. 9) of a part having theprobe contact region PA arranged in the pad PD. Similarly, in theopening OP in the cases of FIGS. 9 and 10, a width (a dimension in alongitudinal direction in FIG. 9) of a part having the wire bondingregion WA arranged in the opening OP is slightly (for example, about 2μm to 10 μm) larger than a width (a dimension in the longitudinaldirection in FIG. 9) of a part having the probe contact region PAarranged in the opening OP. The wire bonding region WA is, for example,a substantially circular region with a diameter of 30 μm to 50 μm, whilethe probe contact region PA is, for example, a substantially circularregion with a diameter of 8 μm to 15 μm. The plane shape of the probecontact region PA may be a non-circular shape, depending on the shape ofthe probe used for the probing check.

According to the present embodiment, the wiring line below the pad PD iscontrived, and the wiring line will be described with reference to FIGS.6, 7, 9, and 10.

The wiring structure formed on the semiconductor substrate SB includesthe plurality of wiring layers, the pad PD is formed in the uppermostwiring layer of the plurality of wiring layers, and the wiring line M6is formed in a layer that is lower by one layer than the uppermostwiring layer. That is, the wiring line M6 is the wiring line in thewiring layer that is lower by one layer than the wiring layer where thepad PD is formed. Therefore, there is no wiring line in an upper layerthan the wiring line M6 and a lower layer than the pad PD.

According to the present embodiment, the wiring line M6 can be arrangedin a location where the wiring line M6 overlaps the pad PD in a planview, and the wiring line M6 can be arranged in a location where thewiring line M6 does not overlap the pad PD in a plan view. This meansthat the wiring lines M6 in the wiring layer that is lower by one layerthan the wiring layer where the pad PD is formed may include the wiringline M6 arranged in the location where the wiring line M6 overlaps thepad PD in a plan view and the wiring line M6 arranged in the locationwhere the wiring line M6 does not overlap the pad PD in a plan view.

However, the wiring line M6 cannot be arranged in every location. Aregion immediately below the wire bonding region WA of the pad PD, thatis, a region overlapping the wire bonding region WA in a plan view isspecified as an arrangement forbidden region for the wiring line M6 (aregion where the arrangement of the wiring line M6 is forbidden). Aregion other than the region immediately below the wire bonding regionWA of the pad PD, that is, a region not overlapping the wire bondingregion WA in a plan view is specified as an arrangement allowed regionfor the wiring line M6 (a region where the arrangement of the wiringline M6 is allowed).

According to the present embodiment, a region immediately below theprobe contact region PA of the pad PD, that is, a region overlapping theprobe contact region PA in a plan view is also specified as thearrangement allowed region for the wiring line M6. That is, according tothe present embodiment, while the region immediately below the wirebonding region WA in the region immediately below the pad PD isspecified as the arrangement forbidden region for the wiring line M6,the region other than the region immediately below the wire bondingregion WA is specified as the arrangement allowed region for the wiringline M6, and therefore, the region immediately below the probe contactregion PA of the pad PD is also specified as the arrangement allowedregion for the wiring line M6. In other words, while the regionoverlapping the wire bonding region WA in the region overlapping the padPD in a plan view is specified as the arrangement forbidden region forthe wiring line M6, the region not overlapping the wire bonding regionWA is the arrangement allowed region for the wiring line M6, and theregion overlapping the probe contact region PA is also specified as thearrangement allowed region for the wiring line M6.

Thus, according to the present embodiment, as shown in FIGS. 6,7, 9, and10, the wiring line M6 is arranged immediately below the pad PD, andtherefore, the wiring line M6 is arranged in the region overlapping theopening OP of the insulating film PV in a plan view, while the wiringline M6 immediately below the pad PD is arranged so as to avoid the wirebonding region WA. In other words, while the wiring line M6 is arrangedso that the wiring line M6 overlaps the pad PD in a plan view, thiswiring line M6 is arranged so that this wiring line M6 does not overlapthe wire bonding region WA in a plan view. Hence no wiring line M6 isarranged immediately below the wire bonding region WA of the pad PD, inother words, no wiring line M6 is arranged in the region overlapping thewire bonding region WA of the pad PD in a plan view. Since no wiringline M6 is arranged immediately below the wire bonding region WA of thepad PD, no via V7 is arranged immediately below the wire bonding regionWA of the pad PD, either. Since the region overlapping the probe contactregion PA in a plan view is specified as the arrangement allowed regionfor the wiring line M6, the wiring line M6 is also arranged immediatelybelow the probe contact region PA of the pad PD, in other words, thewiring line M6 is also arranged in the region overlapping the probecontact region PA of the pad PD in a plan view.

According to the present embodiment, note that no wiring line M6 isarranged immediately below the wire bonding region WA of the pad PD. Inother words, no conductor pattern (metal pattern) in the same layer asthat of the wiring line M6 is formed immediately below the wire bondingregion WA of the pad PD.

The configuration shown in FIG. 10 will be more specifically described.In the case of FIG. 10, a plurality of wiring lines M6 (corresponding towiring lines M6 a denoted with a reference symbol M6 a in FIG. 10)extending in a direction (a longitudinal direction in FIG. 10)substantially perpendicular to the direction of extension of the pad PD(a lateral direction in FIG. 10) pass (extend) below the pad PD. Theextension direction of these wiring lines M6 is a direction, forexample, along a chip side (corresponding to the chip side CH describedlater). Note that the chip side corresponds to one side of four sidesmaking up the periphery of the upper surface of the semiconductor deviceCP.

The plurality of wiring lines M6 a shown in FIG. 10 pass below the padPD but do not pass through the region immediately below the wire bondingregion WA, and are therefore arranged in a location where the wiringlines M6 a do not overlap the wire bonding region WA in a plan view. Ina plan view, the plurality of wiring lines M6 a pass through a part ofthe region overlapping the region of pad PD, the part including not thewire contact region WA but the probe contact region PA. As a result, ina plan view, at least one wiring line M6 a overlaps the probe contactregion PA, in other words, at least one wiring line M6 a passes throughthe region immediately below the probe contact region PA.

While the plurality of wiring lines M6 a of FIG. 10 pass below the padPD, no via V7 is arranged between the pad PD and the plurality of wiringlines M6 a. Therefore, the pad PD and the wiring lines M6 a passingbelow the pad PD shown in FIG. 10 are not electrically connected to eachother. On the other hand, a wiring line M6 b shown in FIG. 10 iselectrically connected to the pad PD through the vias V7. The wiringline M6 b and vias V7 are also arranged in a location where they do notoverlap the wire bonding region WA in a plan view. Note that the wiringlines M6 a and M6 b are wiring lines (M6) in the wiring layer that islower by one layer than the pad PD.

In the case of FIG. 10, six wiring lines M6 a pass below the pad PD.However, the number of wiring lines M6 a passing below the pad PD is notlimited to six and can be variously changed. As the wiring lines M6 apassing below the pad PD, for example, a power supply wiring line or aground wiring line can be used. The plurality of wiring lines M6 apassing below the pad PD may include both the power supply wiring lineand the ground wiring line. Note that the power supply wiring line is awiring line through which a power supply potential is supplied, and theground wiring line is a wiring line through which a ground potential issupplied. The thickness of the wiring line M6 is larger than respectivethicknesses of the wiring lines M1, M2, M3, M4, and M5, and therefore,the resistance of the wiring line M6 (wiring resistance) can be madelower than respective resistances (wiring resistances) of the wiringlines M1, M2, M3, M4, and M5. For this reason, by using the wiring lineM6 as the power supply wiring line, the ground wiring line or both thepower supply wiring line and the ground wiring line, the resistance(wiring resistance) of the power supply wiring line or the ground wiringline or the resistances of both the power supply wiring line and theground wiring line can be reduced.

The damage on the interlayer insulating film IL8 sandwiched by the padPD and the wiring lines (M6) caused when an external force is applied tothe pad PD can be suppressed in a case of a plurality of relativelynarrow wiring lines (M6) passing below the pad PD in the wiring layerthat is lower by one layer than the pad PD more than a case of one widewiring line (M6) passing below the pad PD. Therefore, this manner ismore advantageous in improving the reliability of the semiconductordevice. In FIG. 10, a single wiring line created by integrallyconnecting the plurality of wiring lines M6 a can be used as a widerpower supply wiring line or a wide ground wiring line. Or rather, it ismore preferable to use the plurality of relatively narrow wiring linesM6 a as the power supply wiring lines or the ground wiring lines.

<Processes of Manufacturing Semiconductor Device>

Processes of manufacturing the semiconductor device CP of the presentembodiment will be described with reference to FIGS. 12 to 19. FIGS. 12to 19 are cross-sectional views of the principle part of thesemiconductor device CP of the present embodiment during manufacturingprocesses.

First, the semiconductor substrate (semiconductor wafer) SB made ofsingle-crystal silicon, etc., is prepared, and then, a semiconductorelement such as a MISFET is formed on the semiconductor substrate SB byusing a publicly-known semiconductor manufacturing technique. Forexample, as shown in FIG. 12, an element isolation region ST is formedin the semiconductor substrate SB by an STI method, a well region (notillustrated) is formed in the semiconductor substrate SB by an ioninjection method, the gate electrode GE is formed on the semiconductorsubstrate SB (well region) via the gate insulating film, and thesource/drain region SD is formed in the semiconductor substrate SB (wellregion) by an ion injection method. In this manner, a MISFET1 is formedon the semiconductor substrate SB.

Subsequently, as shown in FIG. 13, the interlayer insulating film IL1 isformed on the semiconductor substrate SB so as to cover the MISFET1, acontact hole is formed in the interlayer insulating film IL1 by aphotolithography technique and a dry etching technique, and a conductivefilm is buried in the contact hole, so that the plug V1 is formed.

Subsequently, as shown in FIG. 14, the interlayer insulating film IL2 isformed on the interlayer insulating film IL1 in which the plug V1 isburied, and then, the wiring line M1 is buried in the interlayerinsulating film IL2 by a single damascene technique. Then, theinterlayer insulating film IL3 is formed on the interlayer insulatingfilm IL2 in which the wiring line M1 is buried, and then, the wiringline M2 and the via V2 are buried in the interlayer insulating film IL3by a dual damascene technique. Then, the interlayer insulating film IL4is formed on the interlayer insulating film IL3 in which the wiring lineM2 is buried, and then, the wiring line M3 and the via V3 are buried inthe interlayer insulating film IL4 by a dual damascene technique. Then,the interlayer insulating film IL5 is formed on the interlayerinsulating film IL4 in which the wiring line M3 is buried, and then, thewiring line M4 and the via V4 are buried in the interlayer insulatingfilm IL5 by a dual damascene technique. Then, the interlayer insulatingfilm IL6 is formed on the interlayer insulating film IL5 in which thewiring line M4 is buried, and then, the wiring line M5 and the via V5are buried in the interlayer insulating film IL6 by a dual damascenetechnique. Then, the interlayer insulating film IL7 is formed on theinterlayer insulating film IL6 in which the wiring line M5 is buried,and then, the wiring line M6 and the via V6 are buried in the interlayerinsulating film IL7 by a dual damascene technique.

After the formation of the interlayer insulating film IL7 and theformation of the wiring line M6 and the via V6 buried in the interlayerinsulating film IL7 by the dual damascene technique, the interlayerinsulating film IL8 is formed on the interlayer insulating film IL7 inwhich the wiring line M6 is buried as shown in FIG. 15. In FIG. 15 andFIGS. 16 to 19 described later, illustration of the structure lower thanthe interlayer insulating film IL6 is omitted for simplifying thedrawings.

Subsequently, an opening SH is formed in the interlayer insulating filmIL8 by a photolithography technique and an etching technique. By theformation of the opening SH in the interlayer insulating film IL8, theupper surface of the wiring line M6 is exposed at the bottom of theopening SH.

Subsequently, a conductive film for the via V7 is formed on theinterlayer insulating film IL8 so that the conductive film fills theopening SH, and then, the conductive film (the conductive film for thevia V7) outside the opening SH is removed by a CMP (Chemical MechanicalPolishing) method or an etch-back method while the conductive film (theconductive film for the via V7) is left inside the opening SH. Thus, thevia V7 can be formed of the conductive film (the conductive film for thevia V7) buried in the opening SH.

As the interlayer insulating films IL2 to IL6, for example, a siliconoxide film or others can be used. However, usage of a low dielectricconstant film (Low-k film) is more preferable because of being capableof reducing a parasitic capacitance between the wiring lines. The lowdielectric constant film described here means an insulating film whosedielectric constant is lower than a dielectric constant (=3.8 to 4.3) ofsilicon oxide (SiO²), and particularly means an insulating film whosedielectric constant is lower than 3.3. As a specific material of the lowdielectric constant film, for example, an SiOC film (a carbon-contentsilicon oxide film), an SiOF film (a fluorine-content silicon oxidefilm), an SiCN film (a silicon carbonitride film) and others can beexemplified.

As the interlayer insulating films IL7 and IL8, for example, a siliconoxide film or others can be used. As the silicon oxide film, a TEOS(tetraethoxysilane) oxide film, a BPSG film, etc., can be used. Adistance between the adjacent wiring lines in the wiring layer includingthe wiring line M6 is large than a distance between the adjacent wiringlines in a wring layer lower than the wiring layer including the wiringline M6, and respective thicknesses of the interlayer insulating filmsIL7 and IL8 are larger than respective thicknesses of the interlayerinsulating films IL2, IL3, IL4, IL5, and IL6, and therefore, theparasitic capacitance is difficult to occur in the wiring line M6 morethan the wiring lines M1, M2, M3, M4, and M5. For this reason, while thelow dielectric constant film can be used as each of the interlayerinsulating films IL7 and IL8, increase in the parasitic capacitancehardly occurs even if the low dielectric constant film is not used aseach of the interlayer insulating films IL7 and IL8.

Subsequently, as shown in FIG. 16, the barrier conductor film BR1, theAl-content conductor film AM1, and the barrier conductor film BR2 areformed in this order on the interlayer insulating film IL8 in which thevia V7 is buried, so that the stacked film SM composed of the barrierconductor film BR1, the Al-content conductor film AM1 formed on thebarrier conductor film BR1, and the barrier conductor film BR2 formed onthe Al-content conductor film AM1 is formed. Each of the barrierconductor film BR1, the Al-content conductor film AM1, and the barrierconductor film BR2 can be formed by a sputtering method or others.

Subsequently, as shown in FIG. 17, the stacked film SM is patterned by aphotolithography technique and an etching technique, so that the pad PDis formed. That is, a photoresist pattern (not illustrated) is formed onthe stacked film SM by the photolithography technique, and then, thestacked film SM is etched while using the photoresist pattern as anetching mask, so that the stacked film SM is patterned to form the padPD from the patterned stacked film SM. After that, the photoresistpattern is removed, and this stage is shown in FIG. 17. In this stage,the pad PD as a whole is the stacked film composed of the barrierconductor film BR1, the Al-content conductor film AM1 formed on thebarrier conductor film BR1, and the barrier conductor film BR2 formed onthe Al-content conductor film AM1. Note that not only the pad PD butalso the wiring line in the same layer as that of the pad PD can be alsoformed when the stacked film SM is patterned at step S22. In this case,the wiring line in the same layer as that of the pad PD is formed on theinterlayer insulating film IL8.

The case of the individual formation of the via V7 and the pad PD hasbeen illustrated and described above. As another aspect, the via V7 canbe formed integrally with the pad PD. In this case, the stacked film SMis formed on the interlayer insulating film IL8 including the opening SHwhile the via V7 is not formed yet, and then, the stacked film SM ispatterned by using the photolithography technique and the etchingtechnique, so that the pad PD is formed. By the stacked film SMpatterned through this process, the pad PD and the via V7 are formedintegrally with each other.

Subsequently, as shown in FIG. 18, the insulating film PV is formed onthe interlayer insulating film IL8 so as to cover the pad PD. As theinsulating film PV, a single-layer insulating film or a stackedinsulating film obtained by stacking the insulating films can be used.For example, a silicon oxide film, a silicon nitride film or a stackedfilm composed of these films (e.g., a stacked film composed of a siliconoxide film and a silicon nitride film formed the silicon oxide film) canbe used as the insulating film PV. A resin film (an organic-basedinsulating film) such as polyimide resin film can be also used as theinsulating film PV.

Subsequently, as shown in FIG. 19, the opening OP is formed in theinsulating film PV. For example, a photoresist pattern (not illustrated)is formed on the insulating film PV by the photolithography technique,and then, the insulating film PV is etched while using the photoresistpattern as an etching mask, so that the opening OP can be formed in theinsulating film PV. Then, the photoresist pattern is removed, and thisstage is shown in FIG. 19.

In the etching process of forming the opening OP in the insulating filmPV, the insulating film PV is etched to form the opening OP in theinsulating film PV and to expose the barrier conductor film BR2 of thepad PD at the opening OP, and then, the barrier conductor film BR2exposed at the opening OP is further etched and removed, so that theAl-content conductive film AM1 of the pad PD can be exposed at theopening OP. That is, in the region overlapping the opening OP in a planview, not only the insulating film PV but also the barrier conductorfilm BR2 making up the pad PD are etched and removed, and therefore, theupper surface of the Al-content conductive film AM1 making up the pad PDis exposed. On the other hand, in the region covered with the insulatingfilm PV even after the opening OP is formed, the barrier conductor filmBR2 is not removed but left.

After that, a metal film (not illustrated) can be formed on the pad PD(the Al-content conductive film AM1) exposed at the opening OP ifneeded. As this metal film, for example, a palladium film or others canbe used. For example, the metal film (e.g., palladium film) is formed onthe insulating film PV including apart on the side wall of the openingOP and a part on the pad PD (the Al-content conductive film AM1) exposedat the opening OP, and then, this metal film is patterned by using thephotolithography technique and the etching technique. By this process, astructure in which the metal film (e.g., palladium film) is formed onthe pad PD (the Al-content conductive film AM1) exposed at the openingOP can be obtained.

In this manner, as described with reference to FIGS. 12 to 19, thesemiconductor substrate SB is subjected to a wafer process. The waferprocess is referred to also as pretreatment. This wafer process isgenerally described as a process forming various elements (MISFET,etc.), wiring layers (wiring lines M1 to M6), and pad electrodes (padsPD) on a main surface of a semiconductor wafer (semiconductor substrateSB), forming a surface protective film (insulating film PV), and causinga state in which an electrical test for each of a plurality of chipregions formed on the semiconductor wafer can be performed by using aprobe or others. Each chip region of the semiconductor wafer correspondsto a region from which one semiconductor chip (the semiconductor deviceCP in this case) can be obtained.

Subsequently, the probing check (probing test, wafer test) is performedwhile using the pad PD exposed at the opening OP, so that the electricaltest for each chip region of the semiconductor wafer (semiconductorsubstrate SB) is performed. Specifically, as shown in FIG. 11, in eachchip region of the semiconductor wafer (semiconductor substrate SB), theelectrical check (electrical test) is performed for each chip regionwhile bring the check (test) probe PRB into contact with the probecontact region PA of the pad PD, which is exposed at the opening OP. Itis determined whether each chip region of the semiconductor wafer(semiconductor substrate SB) is defective or non-defective based on theresult of this probing check, or measurement result data of the probingcheck is fed back to each manufacturing process, so that the result ishelpful for improving the yield or the product reliability. Note thateach chip region of the semiconductor wafer corresponds to a region fromwhich one semiconductor chip (a semiconductor chip corresponding to thesemiconductor device CP) can be obtained.

After that, the back surface of the semiconductor substrate SB is groundor polished to reduce the thickness of the semiconductor substrate SB(back surface grinding process) if needed, and then, the semiconductorsubstrate SB is diced (cut) together with the stacked structure on thesemiconductor substrate SB (dicing process). In this process, thesemiconductor substrate SB and the stacked structure on thesemiconductor substrate SB are diced (cut) along a scribing region. Inthis manner, the semiconductor substrate SB and stacked structure on thesemiconductor substrate SB are (individually) divided into a pluralityof semiconductor chips.

In this manner, the semiconductor device (semiconductor chip) CP can bemanufactured.

<Study Example>

FIG. 20 is a cross-sectional view of a principle part of a semiconductordevice (semiconductor chip) CP101 of a first study example studied bythe present inventors, and corresponds to FIG. of the present embodimentdescribed above. FIG. 21 is a cross-sectional view showing a state inwhich a copper wire BW101 is electrically connected to a pad PD101 ofthe semiconductor device CP101 of the first study example, andcorresponds to FIG. 8 of the present embodiment described above.

In the semiconductor device CP101 of the first study example shown inFIGS. 20 and 21, almost the whole of the region immediately below thepad PD101 is specified as the arrangement prohibited region for thewiring line M6. In other words, the whole of the region overlapping theopening OP at which the pad PD101 is exposed in a plan view is specifiedas the arrangement prohibited region for the wiring line M6. Therefore,in the semiconductor device CP101 of the first study example, the wiringline M6 is not arranged in an almost whole part immediately below thepad PD101, and the wiring line M6 is arranged in neither a partimmediately below a wire bonding region WA101 nor a part immediatelybelow a probe contact region PA101. In this study example, the regioncorresponding to the probe contact region PA on the upper surface of thepad PD101 is referred to as probe contact region PA101, and the regioncorresponding to the wire bonding region WA thereon is referred to aswire bonding region WA101.

In the first study example shown in FIGS. 20 and 21, almost the whole ofthe region immediately below the pad PD101 is specified as thearrangement prohibited region for the wiring line M6, and therefore, adegree of freedom in laying out the wiring lines M6 is reduced, and itis difficult to design the wiring of the semiconductor device CP101.And, it is required to arrange the wiring line M6 so as to avoid theregion immediately below the pad PD101, and therefore, this arrangementis disadvantageous for downsizing the semiconductor device CP101, thusleading to increase in a plane dimension of the semiconductor deviceCP101.

FIG. 22 is a cross-sectional view of a principle part of a semiconductordevice (semiconductor chip) CP201 of a second study example studied bythe present inventors, and corresponds to FIG. of the present embodimentdescribed above. FIG. 23 is a cross-sectional view showing a state inwhich a copper wire BW201 is electrically connected to a pad PD201 ofthe semiconductor device CP201 of the second study example, andcorresponds to FIG. 8 according to the present embodiment describedabove.

In the semiconductor device CP201 of the second study example shown inFIGS. 22 and 23, the whole of the region immediately below the pad PD101is specified as the arrangement allowed region for the wiring line M6.Therefore, in the second study example shown in FIGS. 22 and 23, thewiring line M6 is arranged immediately below a probe contact regionPA201, and the wiring line M6 is also arranged immediately below a wirebonding region WA201. In other words, in a plan view in the second studyexample, the wiring line M6 is arranged in a region overlapping theprobe contact region PA201, and the wiring line M6 is also arranged in aregion overlapping the wire bonding region WA201. In this study example,the region corresponding to the probe contact region PA on the uppersurface of the pad PD201 is referred to as probe contact region PA201,and the region corresponding to the wire bonding region WA thereon isreferred to as wire bonding region WA201.

The present inventors have studied the connection of the copper wire tothe pad of the semiconductor chip, and have found that the second studyexample shown in FIGS. 22 and 23 has the following problems.

A copper (Cu) wire is material harder than a gold (Au) wire. Therefore,in the wire bonding process of connecting the copper wire to the pad ofthe semiconductor chip, a strong external force (pressure) is adverselyapplied to the wire bonding regions (WA, WA101, WA201) of the pad of thesemiconductor chip. When the usage of the copper wire is compared withthe usage of the gold wire, the external force (pressure) applied to thewire bonding regions (WA, WA101, WA201) of the pad of the semiconductorchip in the the wire bonding process is larger in the usage of thecopper wire than the usage of the gold wire. In the wire bondingprocess, a ball on a tip of the copper wire is pressed against the padof the semiconductor chip to be compressed and bonded thereto. When thecopper wire is used, the hardness of the copper (Cu) is high, andtherefore, the ball on the tip of the copper wire cannot be properlycompressed and bonded to the pad of the semiconductor chip if thecompressive-bonding pressure is not large enough. For this reason, inthe wire bonding process using the copper wire, a large external force(compressive-bonding pressure) is adversely applied to the wire bondingregions (WA, WA101, WA201) of the pad of the semiconductor chip to whichthe copper wire is connected.

When the compressive-bonding pressure in the wire bonding process islarge, the semiconductor device CP201 of the second study example shownin FIGS. 22 and 23 has a risk of occurrence of cracks in an insulatingfilm (the interlayer insulating film IL8 in this case) below the padPD201 because of the usage of the copper wire.

Specifically, when a strong external force is applied to the wirebonding region WA201 of the pad PD201 in the wire bonding process usingthe copper wire, a strong stress is applied to the insulating film (theinterlayer insulating film IL8 in this case) that is sandwiched fromabove and below by the pad PD201 of the wire bonding region WA201 andthe wiring line M6 below the wire bonding region WA201 to cause cracksCR (see FIG. 23).

Once the cracks CR are caused in the insulating film (the interlayerinsulating film IL8 in this case) below the pad PD201, a risk ofreduction in the reliability of the semiconductor device is caused sincemoisture, etc., infiltrates from the cracks CR. And, by heat stresscaused when the semiconductor package is manufactured, the risk ofreduction in the reliability of the semiconductor device is caused sincethe pad PD201, etc., is peeled off from the cracks CR. Therefore, inorder to improve the reliability of the semiconductor device, it isdesirable not to cause the cracks in the insulating film below the padeven in the wire bonding process using the copper wire.

<Major Features and Effects>

One of major features of the present embodiment is that, in thesemiconductor device CP, the pad PD is used as the pad for copper wireconnection, and that the wiring line M6 is arranged below the pad PD sothat the wiring line M6 is arranged immediately below a region otherthan the wire bonding region WA of the pad PD but the conductor patternin the same layer as that of the wiring line M6 is not arrangedimmediately below the wire bonding region WA of the pad PD.

When the wiring line M6 is arranged immediately below the wire bondingregion WA as different from the present embodiment, that is, when thewiring line M6 is arranged in the region overlapping the wire bondingregion WA in a plan view, there is the risk of occurrence of the cracksin the insulating film (the interlayer insulating film IL8) below thepad PD as described above in the first study example. This is because,by the application of the strong external force (compressive-bondingpressure) to the wire bonding region WA of the pad PD in the wirebonding process using the copper wire, the strong stress is applied tothe insulating film (the interlayer insulating film IL8 in this case)that is sandwiched from above and below by the pad PD in the wirebonding region WA and the wiring line M6 below the wire bonding regionWA to cause the cracks.

On the other hand, in the present embodiment, no wiring line M6 isarranged in the region overlapping the wire bonding region WA in a planview, that is, no wiring line M6 is arranged immediately below the wirebonding region WA. In the wire bonding process, a place to which thestrong external force (compressive-bonding pressure) is applied is thewire bonding region WA of the pad PD. Therefore, if no wiring line M6 isarranged immediately below the wire bonding region WA, it can be avoidedto cause a state in which the insulating film (IL8) is sandwiched in thewire bonding process from above and below by the pad PD in the wirebonding region WA to which the strong external force is applied and thewiring line M6 below the pad PD, and therefore, the occurrence of thecracks in the insulating film (IL8) below the pad PD can be suppressedor prevented.

In other words, the arrangement of the wiring line M6 in the part belowthe pad PD causes the state (structure) in which the insulating film(the interlayer insulating film IL8 in this case) is sandwiched fromabove and below by the pad PD and the wiring line M6 below the pad PD.In this state, when the strong external force (compressive-bondingpressure in the wire bonding in this case) is applied to the uppersurface of the pad PD, the strong stress because of the external forcemay be caused in the insulating film (IL8) that is sandwiched from aboveand below by the pad PD and the wiring line M6 below the pad PD, whichresults in the occurrence of the cracks in the insulating film (IL8).The cracks are caused by the application of the stress to the insulatingfilm (IL8) that is sandwiched from above and below by a part of the padPD to which the strong external force is applied and the wiring line M6below the pad PD, the stress being caused by the external force appliedto the pad PD. Therefore, in order to prevent the cracks in theinsulating film (IL8) below the pad PD, it is effective not to arrangethe wiring M6 in a part below the region of the pad PD to which thestrong external force (the compressive-bonding pressure in the wirebonding in this case) is applied. That is, in order to prevent thecracks in the insulating film (IL8) below the pad PD, it is effectivenot to arrange the wiring M6 in the part below the wire bonding regionWA of the pad PD to which the strong external force is applied in thewire bonding process as offered in the present embodiment. In thismanner, even if the strong external force (the compressive-bondingpressure in the wire bonding) is applied to the upper surface of the padPD, it can be avoided to cause the state in which the insulating film(IL8) is sandwiched by the pad PD in the part to which the strongexternal force is applied and the wiring line M6 below the pad PDbecause of no existence of the wiring line M6 below the part (the wirebonding region WA) to which the strong external force is applied, andtherefore, the occurrence of the cracks in the insulating film (IL8)below the pad PD can be suppressed or prevented.

According to the present embodiment, note that no wiring line M6 isarranged immediately below the wire bonding region WA of the pad PD. Inother words, no conductor pattern (wiring line) in the same layer asthat of the wiring line M6 is formed immediately below the wire bondingregion WA of the pad PD.

According to the present embodiment, although the whole of the regionimmediately below the pad PD is not specified as the arrangementprohibited region for the wiring line M6, the region immediately belowthe wire bonding region WA in the region below the pad PD is specifiedas the arrangement prohibited region for the wiring line M6. On theother hand, the region other than the region immediately below the wirebonding region WA in the region immediately below the pad PD isspecified as the arrangement allowed region for the wiring line M6.Therefore, according to the present embodiment, the wiring line M6 isarranged in the region other than the region immediately below the wirebonding region WA in the region immediately below the pad PD. In otherwords, the wiring line M6 immediately below the pad PD is arrangedimmediately below the region other than the wire bonding region WA inthe pad PD. That is, in a plan view, the wiring line M6 is arranged inthe region overlapping the pad PD but not overlapping the wire bondingregion WA. In this manner, according to the present embodiment, whilethe wiring line M6 is also arranged below the pad PD and the wiring lineM6 is arranged in the region overlapping the opening OP of theinsulating film PV in a plan view, the wiring line M6 is arranged so asto avoid the part immediately below the wire bonding region WA since theregion immediately below the wire bonding region WA is specified as thearrangement prohibited region for the wiring line M6.

In the present embodiment, the wiring line M6 can be arranged in thepart immediately below the pad PD, the part not including the wirebonding region WA, and therefore, the degree of freedom in laying outthe wiring line M6 is larger than that in the above-described firststudy example, and it is easier to design the wiring line of thesemiconductor device CP. Since the wiring line M6 can be arranged in thepart immediately below the pad PD, the part not including the wirebonding region WA, this arrangement is advantageous for the downsizingof the semiconductor device CP, and the plane dimension (plane area) ofthe semiconductor device CP can be reduced.

Another one of the major features of the present embodiment is that, inthe present embodiment, the region immediately below the wire bondingregion WA is specified as the arrangement prohibited region for thewiring line M6 while the region immediately below the probe contactregion PA, is specified as the arrangement allowed region for the wiringline M6 so that the wiring line M6 is not arranged immediately below thewire bonding region WA while the wiring line M6 is arranged immediatelybelow the probe contact region PA. That is, according to the presentembodiment, while the wiring line M6 is not arranged in the regionoverlapping the wire bonding region WA in a plan view, the wiring lineM6 is arranged in the region overlapping the probe contact region PA ina plan view.

To the upper surface of the pad PD, the external force (pressure) isapplied in the probing check process and the wire bonding process.Therefore, regions which are on the upper surface of the pad PD and towhich a relatively large external force is applied before completion ofthe semiconductor package are the probe contact region PA and the wirebonding region WA. When the external force is applied to the pad, if theexternal force is large, there is a possibility of the occurrence of thecracks in the insulating film (IL8) below the pad PD because of theexternal force, and the cracks tend to occur when the insulating film(IL8) is sandwiched by the part of the pad to which the external forceis applied and the wiring line M6 below the pad. Therefore, when nowiring line M6 is arranged immediately below the wire bonding region WAto which the strong external force is applied in the wire bondingprocess as offered in the present embodiment, even if the strongexternal force is applied to the wire bonding region WA of the pad PD inthe wire bonding process, the occurrence of the cracks in the insulatingfilm (IL8) below the pad PD because of the external force can besuppressed or prevented. On the other hand, since an external force(external force in the probing check process) applied to the probecontact region PA is relatively smaller than an external force (externalforce in the wire bonding process) applied to the wire bonding regionWA, a possibility (risk) of the occurrence of the cracks in theinsulating film (IL8) in the probing check process is lower than apossibility (risk) of the occurrence of the cracks in the insulatingfilm (IL8) in the wire bonding process.

therefore, according to the present embodiment, in the wire bondingprocess having a relatively high possibility (risk) of the occurrence ofthe cracks in the insulating film (IL8) below the pad PD, no wiring lineM6 is arranged immediately below the wire bonding region WA of the padPD to which the external force is applied in order to reduce thepossibility. Meanwhile, since the probing check process has a relativelylower possibility (risk) of the occurrence of the cracks in theinsulating film (IL8) below the pad PD than that of the wire bondingprocess, the wiring line M6 is arranged immediately below the probecontact region PA of the pad PD to which the external force is appliedin the probing check process. Thus, according to the present embodiment,while the region immediately below the wire bonding region WA isspecified as the arrangement prohibited region for the wiring line M6 sothat no wiring line M6 is arranged immediately below the wire bondingregion WA, the region immediately below the probe contact region PA isspecified as the arrangement allowed region for the wiring line M6 sothat the wiring line M6 is arranged immediately below the probe contactregion PA.

A reason why the external force (the external force in the probing checkprocess) applied to the probe contact region PA is relatively smallerthan the external force (the external force in the wire bonding process)applied to the wire bonding region WA is that the wire (BW) connected tothe pad PD is the copper (Cu) wire. The copper (Cu) wire requires alarger compressive-bonding pressure in the wire bonding than that of agold (Au) wire, etc. Therefore, in the wire bonding process ofconnecting the copper wire (BW) to the pad PD of the semiconductordevice CP, the strong external force is necessarily applied to the wirebonding region WA of the pad PD. On the other hand, to the probe contactregion PA of the pad PD, the probe is pressed in the probing check, andtherefore, the external force (pressure) caused by the probe is applied.However, since the large compressive-bonding pressure is required in thewire bonding when the copper wire is used as the wire BW connected tothe pad PD, the external force applied to the wire bonding region WA ofthe pad PD in the wire bonding process becomes larger than the externalforce applied to the probe contact region PA of the pad PD in theprobing check process. In other words, the external force applied to theprobe contact region PA of the pad PD in the probing check processbecomes smaller than the external force applied to the wire bondingregion WA of the pad PD in the wire bonding process. Therefore, when thecopper wire is used as the wire BW connected to the pad PD, the largecompressive-bonding pressure is required in the wire bonding, andtherefore, the external force (the external force in the probing checkprocess) applied to the probe contact region PA becomes necessarilyrelatively smaller than the external force (the external force in thewire bonding process) applied to the wire bonding region WA.

For this reason, according to the present embodiment, the wiring line M6is configured not to be arranged in the wire bonding region WA havingthe large applied external force by setting the region immediately belowthe wire bonding region WA as the arrangement prohibited region for thewiring line M6. And, the wiring line M6 is configured to be arranged inthe probe contact region PA having the smaller applied external forcethan that of the wire bonding region WA by setting the regionimmediately below the probe contact region PA as the arrangement allowedregion for the wiring line M6. By these configurations, the arrangementprohibited region for the wiring line M6 is limited to increase thearrangement allowed region for the wiring line M6 while the occurrenceof the cracks in the insulating film (IL8) below the pad PD because ofthe external force applied to the pad is efficiently suppressed orprevented, and therefore, the degree of freedom in laying out the wiringline M6 increases, and it becomes easy to design the wiring line of thesemiconductor device CP. In addition, these configurations areadvantageous for the downsizing of the semiconductor device CP, and theplane dimension (plane area) of the semiconductor device CP can bereduced.

According to the present embodiment, the wiring line M6 is arrangedimmediately below the probe contact region PA. Therefore, when the probeis pressed against the probe contact region PA of the pad PD in theprobing check process to apply the external force thereto, the stress isapplied to the insulating film (the interlayer insulating film IL8 inthis case) that is sandwiched from above and below by the probe contactregion PA of the pad PD and the wiring line M6 below the probe contactregion PA. However, as described above, the external force applied tothe probe contact region PA of the pad PD in the probing check processis smaller than the external force applied to the wire bonding region WAof the pad PD in the wire bonding process. For this reason, thepossibility of the occurrence of the cracks in the interlayer insulatingfilm IL8 because of the external force applied to the pad PD in theprobing check process in the present embodiment is lower than thepossibility of the occurrence of the cracks in the interlayer insulatingfilm IL8 because of the external force applied to the pad PD201 in thewire bonding process in the second study example. Therefore, thepossibility of the occurrence of the cracks in the interlayer insulatingfilm IL8 below the pad because of the external force applied to the padis lower in the present embodiment than the second study example. Inthis manner, according to the present embodiment, the occurrence of thecracks in the interlayer insulating film IL8 below the pad can besuppressed or prevented, and therefore, the reliability of thesemiconductor device can be improved. Also, the production yield of thesemiconductor device can be improved.

As different from the present embodiment, it is assumed here to apply astructure in which the wiring line M6 is arranged immediately below thewire bonding region WA while the wiring line M6 is not arrangedimmediately below the probe contact region PA. This structure iseffective for the case of the gold wire as the wire connected to thepad. On the other hand, the case of the copper wire as the wireconnected to the pad has the risk of the occurrence of the cracks in theinsulating film below the pad in the wire bonding process as similar tothe second study example. A reason for this is as follows. That is, inthe case of the gold wire as the wire connected to the pad, the externalforce applied to the pad in the wire bonding process is small, andtherefore, the cracks are difficult to occur in the insulating filmbelow the pad even if the wiring line M6 is arranged immediately belowthe wire bonding region WA. However, in the case of the copper wire asthe wire connected to the pad, the external force applied to the pad inthe wire bonding process is large, and therefore, the cracks are easy tooccur in the insulating film below the pad when the wiring line M6 isarranged immediately below the wire bonding region WA. Therefore, asdifferent from the present embodiment, the structure in which the wiringline M6 is arranged immediately below the wire bonding region WA whilethe wiring line M6 is not arranged immediately below the probe contactregion PA has the risk of the occurrence of the cracks in the insulatingfilm below the pad in the wire bonding process as similar to the secondstudy example.

Thus, the structure in which the wiring line M6 is not arrangedimmediately below the wire bonding region WA while the wiring line M6 isarranged immediately below the probe contact region PA as offered in thepresent embodiment is the effective structure for the case of the copperwire as the wire (BW) connected to the pad PD. Therefore, it can be saidthat the structure in which the wiring line M6 is arranged immediatelybelow not the wire bonding region WA but the probe contact region PA asoffered in the present embodiment could have been made only because thepresent inventors have studied the application of the copper wire, andfound that the cracks are easy to occur in the insulating film below thepad when the copper wire is used since the compressive-bonding pressurein the wire bonding is large.

According to the present embodiment, the wiring line M6 is arrangedimmediately below the probe contact region PA. Therefore, when the probeis pressed against the probe contact region PA of the pad PD to applythe external force (pressure) thereto in the probing check process, thestress is applied to the insulating film (IL8) that is sandwiched fromabove and below by the pad PD of the probe contact region PA and thewiring line M6 below the probe contact region PA. Therefore, in theprobing check process, it is difficult to completely eliminate thepossibility (risk) of the occurrence of the cracks in the insulatingfilm (IL8) below the pad PD. Therefore, it is desirable not to cause thecracks in the insulating film (IL8) below the pad PD as much as possibleeven in the probing check process by improving the probing checkprocess. From this point of view, in the probing check process, not acantilever type probe card but a vertical type probe card (verticalprobe card) is preferably used.

When the cantilever type probe card is used, the cantilever type probeis pressed against the prove contact region PA of the pad PD. In thiscase, the tip of the probe is pressed against the upper surface of thepad PD, and causes such an action (a force) as scratching the uppersurface of the pad PD in a lateral direction (a direction substantiallyparallel to the upper surface of the pad PD).

FIG. 11 described above shows a case of the usage of the vertical typeprobe card, and a probe PRB shown in FIG. 11 corresponds to the probe ofthe vertical type probe card. In the case of the usage of the verticaltype probe card, the probe PRB extending in a direction substantiallyperpendicular to the upper surface of the pad PD (a normal direction tothe upper surface of the pad PD) is pressed against the probe contactregion PA on the upper surface of the pad PD in the directionsubstantially perpendicular to the upper surface of the pad PD. At thistime, when the tip of the probe PRB is pressed against the probe contactregion PA of the pad PD, the tip of the probe PRB does not move in alateral direction. Therefore, in the case of the usage of the verticaltype probe card, even if the external force is applied to the uppersurface of the pad PD in the direction substantially perpendicularthereto when the tip of the probe PRB is pressed against the uppersurface of the pad PD, such an action (a force) as scratching the uppersurface of the pad PD in the lateral direction (the directionsubstantially parallel to the upper surface of the pad PD) is notcaused.

In the probing check process, the case of the usage of the cantilevertype probe card is easy to cause the cracks in the insulating film (IL8)below the pad PD caused by the pressing of the probe against the probecontact region PA of the pad PD to apply the external force thereto. Incontrast, the case of the usage of the vertical type probe card isdifficult to cause the cracks in the insulating film (IL8) below the padPD. This is because, if the external force applied to the probe contactregion PA of the pad PD in the probing check process is only an externalforce component in a direction substantially perpendicular to the uppersurface of the pad PD, the cracks are difficult to occur in theinsulating film (IL8) even if the stress is applied to the insulatingfilm (IL8) that is sandwiched from above and below by the pad PD of theprobe contact region PA and the wiring line M6 below the probe contactregion PA. Such a case corresponds to the case of the usage of thevertical type probe card.

On the other hand, the case of the usage of the cantilever type probecard generates such an action (force) as causing the tip of the probe toscratch the upper surface of the pad PD in the lateral direction. Thisaction causes the stress that results in the cracks in the insulatingfilm (IL8) that is sandwiched from above and below by the pad PD of theprobe contact region PA and the wiring line M6 below the probe contactregion PA, and thus, easily causes the cracks. That is, such an action(force) as causing the tip of the probe to scratch the upper surface ofthe pad PD in the lateral direction has a risk of the easiness of theoccurrence of the cracks in the insulating film (IL8) below the pad PD.Therefore, in the probing check process, it is desirable not to causesuch an action (force) as causing the tip of the probe to scratch theupper surface of the pad PD in the lateral direction.

Therefore, according to the present embodiment, it is preferable to usethe vertical type probe card in the probing check process. In thismanner, even if the wiring line M6 is arranged immediately below theprobe contact region PA, the possibility of the occurrence of the cracksin the insulating film (IL8) below the pad PD can be further reduced,and the occurrence of the cracks in the insulating film (IL8) below thepad PD can be further reliably suppressed or prevented. Therefore, thereliability of the semiconductor device can be further improved.

In this manner, according to the present embodiment, the occurrence ofthe cracks in the insulating film (IL8) because of the external forceapplied to the pad by the probe can be difficult to occur by thepreferable usage of the vertical type probe card in the probing checkprocess, so that the wiring line M6 can be arranged immediately belowthe probe contact regions PA. Meanwhile, since it cannot be avoided tocause the large external force applied to the pad in the wire bondingbecause of the usage of the copper wire for the wire bonding, no wiringline M6 is arranged immediately below the wire bonding region WA so thatthe cracks caused by the external force applied to the pad in the wirebonding are difficult to occur in the insulating film (IL 8). In thismanner, in the probing check process having the possibility of theapplication of the external force to the pad and the wire bondingprocess, the occurrence of the cracks in the insulating film (IL 8)because of the external force applied to the pad can be suppressed orprevented, and the reliability of the semiconductor device can beimproved. And, since the wiring line M6 can be arranged immediatelybelow the prove contact region PA, the degree of freedom in laying outthe wiring line M6 can be increased, and thus, it can be easy to designthe wiring line of the semiconductor device. And, this manner isadvantageous for the downsizing of the semiconductor device, and thus,the plane dimension (plane area) of the semiconductor device can bereduced.

Subsequently, the wiring lines in the lower layers than the wiring lineM6 will be described.

The wiring lines M1, M2, M3, M4, and M5 in the lower layers than thewiring line M6 can be arranged in the regions immediately below the padPD. That is, the whole of the regions immediately below the pad PD isspecified as arrangement allowed regions for the wiring lines M1, M2,M3, M4, and M5. Therefore, while the wiring line M6 cannot be arrangedimmediately below the wire bonding region WA, the wiring lines M1, M2,M3, M4, and M5 can be arranged immediately below the wire bonding regionWA. In other words, while no wiring line M6 is arranged in the regionoverlapping the wire bonding region WA in a plan view, the wiring linesM1, M2, M3, M4, and M5 can be arranged even in the region overlappingthe wire bonding region WA in a plan view. That is, the regionimmediately below the wire bonding region WA is the arrangementprohibited region for the wiring line M6 but the arrangement allowedregion for the wiring lines M1, M2, M3, M4, and M5. The regionimmediately below the probe contact region PA is the arrangement allowedregion for the wiring line M6, and besides, the arrangement allowedregion for the wiring lines M1, M2, M3, M4, and M5. Thus, the wiringline M6 can be arranged immediately below the probe contact region PA,and the wiring lines M1, M2, M3, M4, and M5 can be also arrangedimmediately below the probe contact region PA. That is, the wiring lineM6 cannot but the wiring lines M1, M2, M3, M4, and M5 in the lowerlayers than the wiring line M6 can be arranged immediately below thewire bonding region WA of the region immediately below the pad PD, andnot only the wiring line M6 but also the wiring lines M1, M2, M3, M4,and M5 in the lower layers than the wiring line M6 can be arrangedimmediately below the probe contacting region WA of the same.

That is, in the wiring layer (the wiring layer including the wiring lineM6) that is lower by one layer than the wiring layer where the pad PD isformed, the wiring line M6 is arranged immediately below the pad PD, andthis wiring line M6 below the pad PD is arranged so as to avoid a partimmediately below the wire bonding region WA and arranged also in theregion immediately below the probe contact region PA. On the other hand,in the wiring layer (the wiring layer including the wiring line M5) thatis lower by two layers than the wiring layer where the pad PD is formed,the wiring line M5 is arranged below the pad PD, and the wiring line M5below the pad PD can be also arranged immediately below the wire bondingregion WA, and besides, immediately below the region other than the wirebonding region WA, and therefore, can be arranged also in the regionimmediately below the probe contact region PA.

Therefore, in the case of FIGS. 6 and 7 shown above, the plurality ofwiring lines M5 are arranged below the pad PD so that these wiring linesM5 arranged below the pad PD include a wiring line M5 arrangedimmediately below the wire bonding region WA of the pad PD and a wiringline M5 arranged immediately below the region other than the wirebonding region WA of the pad PD. The region immediately below the probecontact region PA is the arrangement allowed region for the wiring lineM5, and therefore, the plurality of wiring lines M5 arranged below thepad PD in the case of FIGS. 6 and 7 include wiring line M5 arrangedimmediately below the prove contact region PA of the pad PD. In thismanner, a degree of freedom in laying out the wiring line M5 can beincreased, and thus, it can be easy to design the wiring line of thesemiconductor device. And, this manner is advantageous for thedownsizing of the semiconductor device, and thus, the plane dimension(plane area) of the semiconductor device can be reduced. Thearrangements of the wiring lines M1, M2, M3, and M4 are the same as thatof the wiring line 5.

Note that the whole of the region immediately below the pad PD is thearrangement allowed region for the wiring lines M1, M2, M3, M4, and M5,and therefore, any of the wiring lines M1, M2, M3, M4, and M5 can bearranged immediately below the pad PD. Therefore, in addition to a caseof arranging all of the wiring lines M1, M2, M3, M4, and M5 immediatelybelow the pad PD, a case of arranging any of the wiring lines M1, M2,M3, M4, and M5 immediately below the pad PD while arranging another ofthe wiring lines M1, M2, M3, M4, and M5 immediately below the pad PD maybe applied. For example, a case of arranging all of the wiring lines M1,M2, M3, M4, and M5 immediately below the pad PD, a case of arranging thewiring lines M1, M3, and M5 but not arranging the wiring lines M2 and M4immediately below the pad PD, or other cases may be applied. Therefore,while the case of arranging all of the wiring lines M1, M2, M3, M4, andM5 immediately below the wire bonding region WA may be applied, not onlythis case but also a case of arranging any of the wiring lines M1, M2,M3, M4, and M5 immediately below the wire bonding region WA but notarranging another of the wiring lines M1, M2, M3, M4, and M5 immediatelybelow the wire bonding region WA may be applied. Similarly, while thecase of arranging all of the wiring lines M1, M2, M3, M4, and M5immediately below the probe contacting region PA may be applied, notonly this case but also a case of arranging any of the wiring lines M1,M2, M3, M4, and M5 immediately below the probe contacting region PA butnot arranging another of the wiring lines M1, M2, M3, M4, and M5immediately below the probe contacting region PA may be applied.

A reason why the wiring line M6 cannot but the wiring line M5 can bearranged immediately below the wire bonding region WA is as follows.

If the wiring line M6 is arranged immediately below the wire bondingregion WA, the strong external force is applied to the wire bondingregion WA of the pad PD in the wire bonding process using the copperwire, and therefore, there is the risk of the occurrence of the cracksin the insulating film (IL8) because of the application of the strongstress to the insulating film (IL8) that is sandwiched from above andbelow by the pad PD of the wire bonding region WA and the wiring line M6below the wire bonding region WA caused by the external force.Therefore, no wiring line M6 is arranged immediately below the wirebonding region WA. On the other hand, if the wiring line M5 is arrangedimmediately below the wire bonding region WA, the strong external forceis applied to the wire bonding region WA of the pad PD in the wirebonding process using the copper wire, and therefore, the stress isapplied to the insulating films (the interlayer insulating films IL7 andIL8 in this case) that are sandwiched from above and below by the pad PDof the wire bonding region WA and the wiring line M5 below the wirebonding region WA. However, a distance between the pad PD and the wiringline M5 is large, and therefore, influence of the stress is not so largeeven if the stress is applied to the insulating films (IL7 and IL8) thatare sandwiched from above and below by the pad PD of the wire bondingregion WA and the wiring line M5 below the wire bonding region WA in thewire bonding process, so that the occurrence of the cracks in theinsulating films (IL7 and IL8) can be avoided. For this reason, even ifthe wiring line M5 is arranged immediately below the wire bonding regionWA, the occurrence of the cracks in the insulating films (IL7 and IL8)in the wire bonding process caused by this arrangement can be avoided.Thus, by the arrangement of the wiring line M5 immediately below thewire bonding region WA, the degree of freedom in laying out the wiringline M5 can be increased while suppressing or preventing the occurrenceof the cracks in the interlayer insulating films, and thus, it can beeasy to design the wiring line of the semiconductor device. And, thismanner is advantageous for the downsizing of the semiconductor device,and thus, the plane dimension (plane area) of the semiconductor devicecan be reduced.

A reason why the wiring lines M1, M2, M3, and M4 can be arrangedimmediately below the wire bonding region WA is almost the same as thereason why the wiring line M5 can be arranged immediately below the wirebonding region WA. That is, a distance between the pad PD and each ofthe wiring lines M1, M2, M3 and M4 is large, and therefore, influence ofthe stress is not so large even if the stress is applied to theinsulating films that are sandwiched from above and below by the pad PDof the wire bonding region WA and each of the wiring lines M1, M2, M3and M4 below the wire bonding region WA in the wire bonding process, sothat the occurrence of the cracks in the insulating films can beavoided. Thus, by the arrangement of any of the wiring lines M1, M2, M3and M4 immediately below the wire bonding region WA, the degree offreedom in laying out each of the wiring lines M1, M2, M3 and M4 can beincreased while suppressing or preventing the occurrence of the cracksin the interlayer insulating films, and thus, it can be easy to designthe wiring line of the semiconductor device. And, this manner isadvantageous for the downsizing of the semiconductor device, and thus,the plane dimension (plane area) of the semiconductor device can bereduced.

In this manner, a distance between the pad PD and the uppermost wiringline M6 of the wiring lines M1, M2, M3, M4, M5, and M6 in the lowerlayers than the pad PD is small, and therefore, the wiring line M6 isnot arranged immediately below the wire bonding region WA so as not tocause the cracks in the insulating layer (IL 8) that is sandwiched fromabove and below by the pad PD and the wiring line M6 in the wire bondingprocess. On the other hand, a distance between the pad PD and each ofthe wiring lines M1, M2, M3, M4, and M5 in the lower layers than thewiring line M6 is large, and therefore, the occurrence of the cracks inthe insulating layers can be avoided even if any of the wiring lines M1,M2, M3, M4, and M5 is arranged immediately below the wire bonding regionWA. Therefore, the region immediately below the wire bonding region WAis used as the arrangement allowed region for the wiring lines M1, M2,M3, M4 and M5, so that a degree of freedom in laying out each of thewiring lines M1, M2, M3, M4, and M5 can be increased, and thus, it canbe easy to design the wiring line of the semiconductor device. And, thismanner is advantageous for the downsizing of the semiconductor device,and thus, the plane dimension (plane area) of the semiconductor devicecan be reduced.

The semiconductor elements (e.g., MISFET1, etc.) formed on thesemiconductor substrate SB are distant from the pad PD, and therefore,can be arranged immediately below the pad PD. That is, the semiconductorelements (e.g., MISFET1, etc.) formed on the semiconductor substrate SBcab be arranged immediately below the wire bonding region WA, andbesides, immediately below the probe contact region PA. In this manner,a degree of freedom in laying out the semiconductor elements (e.g.,MISFET1, etc.) formed on the semiconductor substrate SB can beincreased, and thus, it can be easy to design the wiring line of thesemiconductor device. And, this manner is advantageous for thedownsizing of the semiconductor device, and thus, the plane dimension(plane area) of the semiconductor device can be reduced.

<Layout Example of Pad PD and Wring Line M6>

Subsequently, layout examples of the pad PD and the wiring line M6 willbe described.

In all of a first layout example (FIGS. 24 and 25), a second layoutexample (FIGS. 26 and 27), a third layout example (FIGS. 28 and 29), anda fourth layout example (FIGS. 30 and 31), a plurality of pads PD arearranged along the chip side CH of the semiconductor device CP, and thewiring line M6 (M6 a) extends below the plurality of pads PD.

First, the first layout example will be described with reference toFIGS. 24 and 25.

Each of FIGS. 24 and 25 is a plan view of a principle part of thesemiconductor device CP according to the present embodiment, and showsthe first layout example of the pads PD and the wiring lines M6.

FIG. 24 shows the plurality of pads PD arranged along the chip side CHof the semiconductor device CP but does not show the wiring line M6.FIG. 25 shows the same plane region as that in FIG. 24, and shows theplurality of pads PD arranged along the chip side CH of thesemiconductor device CP and the wiring line M6 (M6 a) passing below theplurality of pads PD. In FIGS. 24 and 25, a reference symbol CH denotesone side of the four sides making up the periphery of the upper surfaceof the semiconductor chip CP, and this one side is referred to as chipside CH. The X and Y directions shown in FIGS. 24 to 31 are directionsparallel to the upper surface of the semiconductor chip CP, the Ydirection is a direction along the chip side CH, that is, a directionparallel to the chip side CH, and the X direction is a directionintersecting the Y direction, more specifically, a directionperpendicular to the Y direction.

In the case of FIGS. 24 and 25, the plurality of pads PD are arranged(arrayed) along the chip side CH on the upper surface of thesemiconductor chip CP. The plurality of pads PD lined along the chipside CH are oriented in the same direction as one another so that thewire bonding region WA is close to the chip side CH (i.e., close to thechip side CH) while the probe contact region PA is close to an oppositeside of the wire bonding region WA (i.e., far from the chip side CH). Asa result, in the case of FIGS. 24 and 25, the wire bonding regions WA ofthe plurality of pads PD are lined in a row (linearly) in the Ydirection, and the probe contact regions PA of the plurality of pads PDare lined in a row (linearly) in the Y direction.

In the case of FIGS. 24 and 25, the plurality of wiring lines M6 aextend in the Y direction along the chip side CH, and the plurality ofwiring lines M6 a are lined in the X direction. That is, the pluralityof wiring lines M6 a are in parallel to one another along the chip sideCH, and each of the plurality of wiring lines M6 a linearly extendsalong the chip side CH. The plurality of wiring lines M6 a pass (extend)below the plurality of pads PD that are lined along the chip side CH,but do not extend immediately below the wire bonding region WA of eachpad PD.

Also in the case of FIGS. 24 and 25, the region immediately below thewire bonding region WA of each pad PD is used as the arrangementprohibited region for the wiring line M6, while the region immediatelybelow the probe contact region PA of each pad PD is used as thearrangement allowed region for the wiring line M6. These usages are alsocommon to FIGS. 26 to 31 described later. Therefore, in all of FIGS. 24to 31, no wiring line M6 is arranged immediately below the wire bondingregion WA of each pad PD.

In the case of FIGS. 24 and 25, in a plan view, the plurality of wiringlines M6 a pass below a region not including the wire bonding region WAof each pad PD but including the probe contact region PA of the same. Inother words, in the case of FIGS. 24 and 25, all of the wire bondingregions WA of the plurality of pads PD are lined in a row along the chipside CH, and the plurality of wiring lines M6 linearly extend along (arein parallel to) the chip side CH at a position closer to the probecontact region PA than the lined wire bonding regions WA. Therefore, thewiring line M6 a is arranged immediately below the probe contact regionPA of each pad PD.

Subsequently, the second layout example will be described with referenceto FIGS. 26 and 27.

Each of FIGS. 26 and 27 is a plan view of a principle part of thesemiconductor device CP according to the present embodiment, and showsthe second layout example of the pads PD and the wiring lines M6. FIGS.26 and 27 correspond to FIGS. 24 and 25, respectively.

The second layout example shown in FIGS. 26 and 27 is different from thefirst layout example shown in FIGS. 24 and 25 in that the orientation ofthe pad PD of FIGS. 26 and 27 reverses. That is, in the case of FIGS. 26and 27, the plurality of pads PD are arranged (arrayed) along the chipside CH on the upper surface of the semiconductor chip CP so that thepads PD are oriented in the same direction as one another while theprobe contact region PA is close to the chip side CH but the wirebonding region WA is opposite to the wire bonding region WA. Therefore,also in the case of FIGS. 26 and 27, the wire bonding regions WA of theplurality of pads PD are lined in a row (linearly) in the Y direction,and the probe contact regions PA of the plurality of pads PD are alsolined in a row (linearly) in the Y direction. However, while the wirebonding region WA is close to the chip side CH but the probe contactregion PA is far from the chip side CH in the case of FIGS. 24 and 25,the probe contact region PA is close to the chip side CH but the wirebonding region WA is far from the chip side CH in the case of FIGS. 26and 27.

Also in the case of FIGS. 26 and 27, the plurality of wiring lines M6 aextend in the Y direction along the chip side CH, and the plurality ofwiring lines M6 a are lined in the X direction. In other words, theplurality of wiring lines M6 a extend in parallel to the chip side CH,and each of the plurality of wiring lines M6 a linearly extends alongthe chip side CH. The plurality of wiring lines M6 a pass (extend) belowthe plurality of pads PD lined along the chip side CH, but do not extendimmediately below the wire bonding region WA of each pad PD.

Also in the case of FIGS. 26 and 27, in a plan view, the plurality ofwiring lines M6 a pass in the region not including the wire bondingregion WA of each pad PD but including the probe contact region PA ofthe same. In other words, also in the case of FIGS. 26 and 27, while thewire bonding regions WA of the plurality of pads PD are lined in a rowalong the chip side CH, the plurality of wiring lines M6 a linearlyextend along (are in parallel to) the chip side CH at a position closerto the probe contact regions PA than the lined wire bonding region WA.Therefore, the wiring line M6 a is arranged immediately below the probecontact region PA of each pad PD.

In the first layout example shown in FIGS. 24 and 25 and the secondlayout example shown in FIGS. 26 and 27, the plurality of wiring linesM6 a passing below the pads PD extend along the chip side CH, andtherefore, the resistance of the wiring lines M6 a can be reduced. Forexample, the resistance of the wiring lines M6 a can be smaller in thefirst layout example (FIGS. 24 and 25) and the second layout example(FIGS. 26 and 27) in which the wiring lines M6 a passing below the padsPD linearly extend than a case in which the wiring lines M6 a passingbelow the pads PD extends to wind. In this manner, the performance ofthe semiconductor device can be improved.

Subsequently, the third layout example will be described with referenceto FIGS. 28 and 29.

Each of FIGS. 28 and 29 is a plan view of a principle part of thesemiconductor device CP according to the present embodiment, and showsthe third layout example of the pads PD and the wiring lines M6. FIGS.28 and 29 correspond to FIGS. 24 and 25, respectively.

The third layout example shown in FIGS. 28 and 29 is different mainly inthe orientations of the pads PD from the first layout example shown inFIGS. 24 and 25 and the second layout example shown in FIGS. 26 and 27.That is, in the case of FIGS. 28 and 29, the plurality of pads PD arearranged (arrayed) along the chip CH on the upper surface of thesemiconductor device CP so that the respective orientations of the padsPD are not in the same direction as one another and so as to includemixture of two types of pads PD1 and PD2 whose orientations are oppositeto each other. That is, the plurality of pads PD lined along the chip CHare formed of mixture of the pad PD1 having the wire bonding region WAclose to the chip side CH and the probe contact region PA opposite tothe wire bonding region WA and the pad PD2 having the probe contactregion PA close to the chip side CH and the wire bonding region WAopposite to the probe contact region PA. The pads PD1 and pads PD2 arelined, for example, alternately along the chip side CH.

In this case, the pad PD having the wire bonding region WA close to thechip side CH and the probe contact region PA far from the chip side CHis denoted by a reference symbol PD1 and is referred to as pad PD1. And,the pad PD having the probe contact region PA close to the chip side CHand the wire bonding region WA far from the chip side CH is denoted by areference symbol PD2 and is referred to as pad PD2.

In the case of FIGS. 28 and 29, the plurality of pads PD lined along thechip CH are formed of mixture of the pad PD1 having the wire bondingregion WA closer to the chip side CH than the probe contact region PAand the pad PD2 having the probe contact region PA closer to the chipside CH than the wire bonding region WA. On the other hand, in the caseof FIGS. 24 and 25, all of the plurality of pads PD lined along the chipCH are the pads PD1. In the case of FIGS. 26 and 27, all of theplurality of pads PD lined along the chip CH are the pads PD2.

In the case of FIGS. 28 and 29, the wire bonding region WA of the padPD1 and the probe contact region PA of the pad PD2 of the plurality ofpads PD lined along the chip CH are lined in a row (linearly) in the Ydirection. And, the probe contact region PA of the pad PD1 and the wirebonding region WA of the pad PD2 of the plurality of pads PD lined alongthe chip CH are lined in a row (linearly) in the Y direction. Note thatthe row of the lines of the wire bonding region WA of the pad PD1 andthe probe contact region PA of the pad PD2 is close to the chip side CH,while the row of the lines of the probe contact region PA of the pad PD1and the wire bonding region WA of the pad PD2 is far from the chip sideCH. Therefore, in the case of FIGS. 28 and 29, the wire bonding regionsWA of the plurality of pads PD are lined into two rows along the chipside CH. And, on these two rows, the probe contact regions PA of theplurality of pads PD are also lined.

In the case of FIGS. 28 and 29, the plurality of wiring lines M6 aextend along (are in parallel to) the chip side CH so that the pluralityof wiring lines M6 a do not linearly extend along the chip side CH butextend to wind. This is because the wire bonding regions WA of theplurality of pads PD are lined in two rows along the chip side CH, andtherefore, it is required to extend the wiring lines M6 to wind as shownin FIG. 29 in order to extend the wiring lines M6 a below the pads PD soas to avoid the wire bonding regions WA. Specifically, while theplurality of wiring lines M6 a extend (pass) below the plurality of padsPD lined along the chip side CH, they do not extend immediately belowthe respective wire bonding regions WA of the pads PD but extend to windso as to avoid the respective wire bonding regions WA of the pads PD ina plan view. Note that the wiring lines M6 a are arranged immediatelybelow the respective probe contact regions PA of the pads PD.

In the case of FIGS. 28 and 29, the plurality of wiring lines M6 apassing below the pads PD do not linearly extend, and therefore, thecase shown in FIGS. 24 and 25 and the case shown in FIGS. 26 and 27 aremore advantageous than the case shown in FIGS. 28 and 29 from theviewpoint of reducing the resistance of the wiring lines M6 a. On theother hand, while the wire bonding regions WA of the plurality of padsPD are lined in a row in the case shown in FIGS. 24 and 25 and the caseshown in FIGS. 26 and 27, the wire bonding regions WA of the pluralityof pads PD are lined in two rows in the case shown in FIGS. 28 and 29.Therefore, when the wires (BW) are connected to the plurality of padsPD, respectively, a distance between the wires (BW) can be made largerin the case shown in FIGS. 28 and 29 than the case shown in FIGS. 24 and25 and the case shown in FIGS. 26 and 27, and thus, the wire bondingprocess is easily performed, and short circuit between the adjacentwires (BW) is easily prevented.

Subsequently, the fourth layout example will be described with referenceto FIGS. 30 and 31.

Each of FIGS. 30 and 31 is a plan view of a principle part of thesemiconductor device CP according to the present embodiment, and showsthe fourth layout example of the pads PD and the wiring lines M6. FIGS.30 and 31 correspond to FIGS. 24 and 25, respectively.

Also in FIGS. 30 and 31 as similar to the case shown in FIGS. 28 and 29,the plurality of pads PD are arranged (arrayed) along the chip CH on theupper surface of the semiconductor device CP so that the respectiveorientations of the pads PD are not in the same direction as one anotherand so as to include mixture of two types of pads PD1 and PD2 whoseorientations are opposite to each other. That is, also in the case ofFIGS. 30 and 31, the plurality of pads PD lined along the chip CH areformed of mixture of the pad PD1 having the wire bonding region WAcloser to the chip side CH than the probe contact region PA and the padPD2 having the probe contact region PA closer to the chip side CH thanthe wire bonding region WA.

However, in the case of FIGS. 30 and 31, the probe contact region PA ofthe pad PD1 and the probe contact region PA of the pad PD2 of theplurality of pads PD lined along the chip CH are lined in a row(linearly) in the Y direction. Thus, in the case shown in FIGS. 30 and31, the probe contact regions PA of the plurality of pads PD lined alongthe chip CH are lined in a row (linearly) in the Y direction. Meanwhile,the wire bonding regions WA of the pads PD1 of the plurality of pads PDlined along the chip CH are lined in a row (linearly) in the Ydirection. The wire bonding regions WA of the pads PD2 of the pluralityof pads PD lined along the chip CH are also lined in a row (linearly) inthe Y direction. Thus, in the case of FIGS. 30 and 31, the wire bondingregions WA of the plurality of pads PD lined along the chip CH are linedin two rows. In the case of FIGS. 30 and 31, note that the row of thelines of the wire bonding regions WA of the pads PD1 is close to thechip side CH than the row of the lines of the probe contact region PA ofthe pads PD1 and the probe contact regions PA of the pads PD2, while therow of the lines of the wire bonding regions WA of the pads PD2 is farfrom the chip side CH than the row of the lines of the probe contactregions PA of the pads PD1 and the probe contact regions PA of the padsPD2.

Therefore, in the case shown in FIGS. 30 and 31, distances of the padsPD1 and pads PD2 from the chip side CH are different from each other sothat the distance (interval) from the pad PD2 to the chip side CH islarger than the distance (interval) from the pad PD1 to the chip sideCH. In other words, in the case shown in FIGS. 30 and 31, the pad PD1and the pad PD2 are shifted from each other in a position in the Xdirection in a plan view.

In this manner, while the distance between the pad PD1 and the chip sideCH and the distance between the pad PD2 and the chip side CH aresubstantially the same as each other in the case shown in FIGS. 28 and29, the distance between the pad PD2 and the chip side CH is larger thanthe distance between the pad PD1 and the chip side CH in the case shownin FIGS. 30 and 31.

In the case shown in FIGS. 30 and 31, the plurality of wiring lines M6 aextend along the chip side CH in the Y direction, and the plurality ofwiring lines M6 a are lined in the X direction. In other words, theplurality of wiring lines M6 a are in parallel to the chip side CH, andeach of the plurality of wiring lines M6 linearly a extends along thechip side CH. The plurality of wiring lines M6 a pass (extend) below theplurality of pads PD lined along the chip side CH, but do not extendimmediately below the respective wire bonding regions WA of the pads PD.

Also in the case shown in FIGS. 30 and 31, in a plan view, the pluralityof wiring lines M6 pass below the region not including of the wirebonding region WA but including the probe contact region PA of each padPD. In other words, in the case shown in FIGS. 30 and 31, while theplurality of probe contact regions RA of the plurality of pads PD arelined in a row along the chip side CH, the plurality of wiring lines M6linearly extend along the chip side CH so as to pass below the linedprobe contact regions PA. Therefore, the wiring lines M6 are arrangedimmediately below the respective probe contact regions PA of the padsPD.

Also in the case shown in FIGS. 30 and 31 (fourth layout example), eachof the plurality of wiring lines M6 a passing below the pads PD linearlyextends along the chip side CH as similar to the case shown in FIGS. 24and 25 (first layout example) and the case shown in FIGS. 26 and 27(second layout example), and therefore, the resistance of the wiringlines M6 a can be reduced. In this manner, the performance of thesemiconductor device can be improved.

That is, in the first, second, and fourth layout examples, the probecontact regions PA of the plurality of pads PD lined along the chip sideCH are lined in a row in the direction along the chip side CH (i.e., Ydirection), and therefore, the wiring line M6 a can linearly extendbelow the probe contact regions PA of the plurality of pads PD, so thatthe resistance of the wiring lines M6 a can be reduced.

In the case shown in FIGS. 30 and 31, the wire bonding regions WA of theplurality of pads PD lined along the chip side CFI are lined in tworows. Therefore, when the wires (BW) are connected to the plurality ofpads PD, respectively, a distance between the wires (BW) can be madelarger in the case shown in FIGS. 30 and 31 than the case shown in FIGS.24 and 25 and the case shown in FIGS. 26 and 27, and thus, the wirebonding process is easily performed, and short circuit between theadjacent wires (BW) is easily prevented.

In this manner, the fourth layout example shown in FIGS. 30 and 31 canoffer the advantages of the first to third layout examples.

In the fourth layout example shown in FIGS. 30 and 31, note that an arearequired for arranging the plurality of pads PD along the chip side CHis larger than those of the first to third layout examples. For thisreason, from the viewpoint of reducing the plane dimension (area) of thesemiconductor device as much as possible, the first to third layoutexamples are more advantageous than the fourth layout example shown inFIGS. 30 and 31.

As shown in the first, second, and third layout examples, when each ofthe plurality of wiring lines M6 a passing below the pads PD linearlyextends along the chip side CH, the resistance of the wiring lines M6 acan be reduced. Accompanying effects resulting from this resistancereduction will be described with reference to FIGS. 32 and 33.

Each of FIGS. 32 and 33 is a plan view of an example of arrangement ofpad regions. Each of FIGS. 32 and 33 shows an example of arrangement ofsignal pad regions PDS and power supply pad regions PDD. Although FIG.32 is a plan view, hatching is added to the power supply pad regionsPDD, but hatching is not added to the signal pad regions PDS in order tofacilitate understanding of the plan view.

In this case, the signal pad region PDS corresponds to a region where asignal pad (PD) and an input/output circuit (I/O circuit) electricallyconnected to the signal pad are formed. The power supply pad region PDDcorresponds to a region where a power supply pad (PD) an input/outputcircuit (I/O circuit) electrically connected to the power supply pad areformed. A signal is input from the pad (signal pad) of the signal padregion PDS into the semiconductor chip, or a signal is output from thepad (signal pad) of the signal pad region PDS to outside of thesemiconductor chip. A power supply potential is supplied from the pad(power supply pad) of the power supply pad region PDD into thesemiconductor chip.

In both cases of FIGS. 32 and 33, a plurality of the signal pad regionsPDS and power supply pad regions PDD are arranged along the chip side CHof the semiconductor chip so that the power supply pad region PDD isarranged for each arrangement of a predetermined number of signal padregions PDS. For example, the power supply pad region PDD is arrangedfor each arrangement of three signal pad regions PDS in the case of FIG.32, and the power supply pad region PDD is arranged for each arrangementof six signal pad regions PDS in the case of FIG. 33. Note that thearrangement of FIG. 32 and that of FIG. 33 are examples, and the padregion arrangement is not limited to these examples. What is importantis that the number (which is six in FIG. 33) of signal pad regions PDSarranged between the power supply pad regions PDD in FIG. 33 is largerthan the number (which is three in FIG. 32) of signal pad regions PDSarranged between the power supply pad regions PDD in FIG. 32.

The pads (power supply pads) of the power supply pad regions PDD areelectrically to each other through a power supply wiring line extendingalong the chip side CH of the semiconductor chip. According to the ESD(Electrostatic Discharge) standard, it is required to set a resistance(electric resistance) between adjacent power supply pads to be equal toor lower than a predetermined resistance value (e.g., 2Ω). Therefore,when the resistance (wiring line resistance) of the power supply wiringline is large, it is required to set an interval between the adjacentpower supply pads to be small so that a length of the power supplywiring line electrically connecting the adjacent power supply pads isshort.

On the other hand, when the resistance of the power supply wiring line(wiring line resistance) is small, the length of the power supply wiringline electrically connecting the adjacent power supply pads can belarge, and therefore, the interval between the adjacent power supplypads can be made large. Thus, the small resistance of the power supplywiring line leads to the large interval between the adjacent powersupply pads.

As described above, according to the present embodiment, the wiring lineM6 is allowed to extend below the pad PD, and therefore, the wiring lineM6 can be used as the power supply wiring line. A thickness of thewiring line M6 is large than each thickness of the wiring lines M1, M2,M3, M4, and M5, and therefore, the usage of the wiring line M6 as thepower supply wiring line can reduce the resistance of the power supplywiring line (wiring resistance). Therefore, the present embodiment isapplied so that the wiring line M6 (M6 a) is extended below the pad PDand so that the wiring line M6 (M6 a) is used as the power supply wiringline, so that the resistance of the power supply wiring line can bereduced, and thus, the interval between the adjacent power supply padscan be made large. For example, when not the wiring line M6 but thewiring line M5 is used as the power supply wiring line, it is requiredto set the interval between the adjacent power supply wiring lines to besmall so that the power supply pad region PDD is arranged for eacharrangement of three signal pad regions PDS as shown in FIG. 32. On theother hand, when the wiring line M6 is used as the power supply wiringline, the interval between the adjacent power supply wiring lines can bemade large so that the power supply pad region PDD is arranged for eacharrangement of six signal pad regions PDS as shown in FIG. 33.Therefore, the present embodiment is applied so that the wiring line M6(M6 a) is extended below the pad PD and so that the wiring line M6 (M6a) extending below the pad PD is used as the power supply wiring line,and therefore, the number of power supply pads can be reduced, whichresults in increase in the number of signal pads. In this manner, thenumber of signal pads in the semiconductor chip can be increased, whichmeets a demand for a multi-terminal configuration. In addition, thenumber of required power supply pads can be reduced, so that the planedimension (plane area) of the semiconductor chip can be reduced.

In the foregoing, the invention made by the present inventors has beenconcretely described based on the embodiments. However, it is needlessto say that the present invention is not limited to the foregoingembodiments, and various modifications and alterations can be madewithin the scope of the present invention.

EXPLANATION OF REFERENCE CHARACTERS

-   -   1 MISFET    -   AM1 Al-content conductive film    -   BD1, BD2 bonding material    -   BL solder ball    -   BLD connection terminal    -   BR1, BR2 barrier conductor film    -   BW wire    -   BW101, BW201 copper wire    -   CH chip side    -   CR crack    -   CP, CP101, CP201 semiconductor device    -   DL conductive land    -   DP die pad    -   GE gate electrode    -   IL1, IL2, IL3, IL4, IL5, IL6, IL7, IL8 interlayer insulating        film    -   LD lead    -   M1, M2, M3, M4, M5, M6, M6 a, M6 b wiring line    -   MR1, MR2 sealing portion    -   OP opening    -   PA, PA101, PA201 probe contact region    -   PV insulating film    -   PC wiring board    -   PD, PD1, PD2, PD101, PD201 pad    -   PKG, PKG1, PKG2 semiconductor device    -   SB semiconductor substrate    -   SD source/drain region    -   SH opening    -   ST element isolating region    -   V1 plug    -   V2, V3, V4, V5, V6, V7 via    -   WA, WA101, WA201 wire bonding region

1-20. (canceled)
 21. A semiconductor device comprising: a semiconductorchip having a pad; a copper wire electrically connected to the pad ofthe semiconductor chip; and a sealing resin portion sealing thesemiconductor chip and the copper wire, wherein the semiconductor chipincludes: a semiconductor substrate; a plurality of semiconductorelements formed on a main surface of the semiconductor substrate; and awiring structure formed on the main surface of the semiconductorsubstrate, the wiring structure including a plurality of insulatingfilms and a plurality of wiring layers, wherein the plurality of wiringlayers includes: a first wiring layer; and a second wiring layer,wherein the first wiring layer is an uppermost layer among the pluralityof wiring layers, wherein the first wiring layer includes the pad,wherein the pad has: a first region for bonding the copper wire; and asecond region for bringing a probe into contact with the pad, whereinthe second wiring layer is one layer below the first wiring layer,wherein the second wiring layer includes a first wiring line arrangedimmediately below the second region of the pad, wherein the secondwiring layer has no conductor pattern at a region overlapping with thefirst region of the pad, and wherein an element region of the mainsurface of the semiconductor substrate is overlapped with each of thefirst region and the second region, the plurality of semiconductorelements being formed in the element region.
 22. The semiconductordevice according to claim 21, wherein the plurality of wiring layersincludes a third wiring layer, wherein the third wiring layer is onelayer below the second wiring layer, and wherein the third wiring layerincludes: a second wiring line arranged immediately below the firstregion of the pad; and a third wiring line arranged immediately below aregion other than the first region of the pad.
 23. The semiconductordevice according to claim 22, wherein the third wiring line is arrangedimmediately below the second region of the pad.
 24. The semiconductordevice according to claim 21, wherein the first wiring line is a powersupply wiring line or a ground wiring line.
 25. The semiconductor deviceaccording to claim 21, wherein, in the semiconductor chip, a pluralityof the pads is arranged along a first side of an upper surface of thesemiconductor chip, and wherein the first wiring line extends below theplurality of pads.
 26. The semiconductor device according to claim 25,wherein the second regions of the plurality of pads are lined in a rowin a direction along the first side, and wherein the first wiring linelinearly extends below the second regions of the plurality of pads. 27.The semiconductor device according to claim 26, wherein the firstregions of the plurality of pads are lined in a row in the directionalong the first side.
 28. The semiconductor device according to claim26, wherein the plurality of pads is formed of mixture of a first padhaving the first region closer to the first side than the second regionand a second pad having the second region closer to the first side thanthe first region, and wherein a distance between the second pad and thefirst side is larger than a distance between the first pad and the firstside.
 29. The semiconductor device according to claim 25, wherein theplurality of pads is formed of mixture of a first pad having the firstregion closer to the first side than the second region and a second padhaving the second region closer to the first side than the first region.30. A semiconductor device comprising: a semiconductor substrate; aplurality of semiconductor elements formed on a main surface of thesemiconductor substrate; and a wiring structure formed on the mainsurface of the semiconductor substrate, the wiring structure including aplurality of insulating films and a plurality of wiring layers, whereinthe plurality of wiring layers includes: a first wiring layer; and asecond wiring layer, wherein the first wiring layer is an uppermostlayer among the plurality of wiring layers, wherein the first wiringlayer includes a pad, wherein the pad has: a first region for bondingthe copper wire; and a second region for bringing a probe into contactwith the pad, wherein the second wiring layer is one layer below thefirst wiring layer, wherein the second wiring layer includes a firstwiring line arranged immediately below the second region of the pad,wherein the second wiring layer has no conductor pattern at a regionoverlapping with the first region of the pad, and wherein an elementregion of the main surface of the semiconductor substrate is overlappedwith each of the first region and the second region, the plurality ofsemiconductor elements being formed in the element region.
 31. Thesemiconductor device according to claim 30, wherein the plurality ofwiring layers includes a third wiring layer, wherein the third wiringlayer is one layer below the second wiring layer, and wherein the thirdwiring layer includes: a second wiring line arranged immediately belowthe first region of the pad; and a third wiring line arrangedimmediately below a region other than the first region of the pad. 32.The semiconductor device according to claim 31, wherein the third wiringline is arranged immediately below the second region of the pad.
 33. Thesemiconductor device according to claim 30, wherein the wiring structurehas a first insulating film having an opening at which the first regionand the second region of the pad are exposed.
 34. A method ofmanufacturing a semiconductor device comprising the steps of: (a)preparing a semiconductor substrate; (b) forming a plurality ofsemiconductor elements in an element region of a main surface of thesemiconductor substrate; (c) forming a wiring structure on the mainsurface of the semiconductor substrate, the wiring structure including aplurality of insulating films and a plurality of wiring layers, whereinthe plurality of wiring layers includes: a first wiring layer; and asecond wiring layer, and wherein the first wiring layer is an uppermostlayer among the plurality of wiring layers; (d) performing a probingcheck by bringing a probe into contact with a pad included in the firstwiring layer; and (e) electrically connecting a copper wire to the pad,wherein the pad has: a first region for bonding the copper wire; and asecond region for bringing the probe into contact with the pad, whereinthe second wiring layer is one layer below the first wiring layer,wherein the second wiring layer includes a first wiring line arrangedimmediately below the second region of the pad, wherein the secondwiring layer has no conductor pattern in the same layer as a layer ofthe first wiring line is formed immediately below the first region ofthe pad, and wherein the element region in which the plurality ofsemiconductor elements is formed is overlapped with each of the firstregion and the second region.
 35. The method of manufacturing thesemiconductor device according to claim 34, wherein the plurality ofwiring layers includes a third wiring layer, wherein the third wiringlayer is one layer below the second wiring layer, and wherein the thirdwiring layer includes: a second wiring line arranged immediately belowthe first region of the pad; and a third wiring line arrangedimmediately below a region other than the first region of the pad. 36.The method of manufacturing the semiconductor device according to claim35, wherein the third wiring line is arranged immediately below thesecond region of the pad.
 37. The method of manufacturing thesemiconductor device according to claim 34, wherein, in the step (d), avertical type probe card is used.